Apa Optics, Inc.

GaN high electron mobility transistors or HEMTs are proposed for use as high temperature electronic devices. HEMTs are excellent for both power and low noise amplification since they posses a high car ...

WE PROPOSE A PHASE I RESEARCH PROGRAM AIMED AT DEPOSITING SINGLE CRYSTAL BN FILMS OVER SAPPHIRE AND SILICON CARBIDE SUBSTRATES. OUR PLAN IS TO EMPLOY A UNIQUE PHOTO-ASSISTED SWITCHED ATOMIC LAYER EPIT ...

Electronic devices which operate at high temperatures could be used in many military and commercial systems. GaAs and Si based devices cannot operate at these temperatures and require cooling. Wide ba ...

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SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR (SIS) JUNCTIONS OF HIGH TC, YBACUO-TYPE MATERIALS FOR LONG WAVELENGTH INFRARED (LWIR) DETECTION ARE BEING INVESTIGATED. THE FEASIBILITY IS BEING DETERMINED OF U ...

KEY REQUIREMENTS REMAIN IN THE DEVELOPMENT OF GALLIUM ARSENIDE (GAAS) MONOLITHIC MICROWAVE INTEGRATED CIRCUITS (MMICS) TO BE USED IN COMMUNICATION SYSTEMS, PARTICULARLY IN THE FREQUENCIES OF THE KA BA ...

THE OVERALL OBJECTIVE OF THE PROPOSED EFFORT IS TO DEVELOP A LOW POWER, COMPACT MULTICOLOR, FLAT PANEL DISPLAY. OUR APPROACH IS BASED ON ILLUMINATING A 3-COLOR PHOSPHOR SCREEN WITH AN INFRARED SEMICON ...

MULTISPECTRUM GUIDANCE SYSTEMS ARE BEING DEVELOPED WHICH CONTAIN EXTREMELY SMALL, NON-SPHERICAL OPTICAL COMPONENTS FOR LONG WAVELENGTH IR SEEKERS. THE NAVY REQUIRES A NONCONTACT METHOD OF TESTING THES ...