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Company Information:

Company Name:
Apa Optics, Inc.
Address:
2950 Ne 84th Lane
Blaine, MN 55449
Phone:
N/A
URL:
N/A
EIN:
N/A
DUNS:
N/A
Number of Employees:
24
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $2,356,174.00 43
SBIR Phase II $6,775,445.00 16

Award List:

INTEGRATED OPTIC DEVICE FOR LASER BEAM SCANNING

Award Year / Program / Phase:
1985 / SBIR / Phase I
Award Amount:
$47,885.00
Agency:
NASA
Principal Investigator:
Dr W T Boord , Principal Investigator
Abstract:
N/a

THE NEED FOR SENSITIVE, SELECTIVE,STABLE, AND LOW COST GAS SENSORS WHICH CAN BE USED FOR IN SITE MONITORING OF AN ENVIRONMENT HAS NEVER BEEN ADEQUATELY FULFILLED.

Award Year / Program / Phase:
1986 / SBIR / Phase I
Award Amount:
$49,993.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
W t boord
Abstract:
The need for sensitive, selective,stable, and low cost gas sensors which can be used for in site monitoring of an environment has never been adequately fulfilled. to meet the technical challenge involved in the development of gas sensors, apa optics will utilize integrated optics technology to… More

TRANSMISSION HOLOGRAPHIC RELAY LENS FOR AIRCRAFT HEAD UP DISPLAY

Award Year / Program / Phase:
1986 / SBIR / Phase I
Award Amount:
$49,888.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr A K Jain
Abstract:
N/a

INTEGRATED OPTIC DEVICE FOR LASER BEAM SCANNING

Award Year / Program / Phase:
1987 / SBIR / Phase II
Award Amount:
$125,000.00
Agency:
NASA
Principal Investigator:
Dr W T Boord , Principal Investigator
Abstract:
Most laser scanning systems are mechanical, utilizing a motor to rotate a prism, mirror, or holographic grating. such mechanical systems are or relatively large size and mass. there is a need for a solid state scanning device which would offer benefits of reduced size and mass, no moving parts,… More

TRANSMISSION HOLOGRAPHIC RELAY LENS FOR AIRCRAFT HEAD UP DISPLAY

Award Year / Program / Phase:
1987 / SBIR / Phase II
Award Amount:
$75,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr A K Jain
Abstract:
The objective of the proposed effort is to reduce the size, weight, and cost of the relay optics of the aircraft head up display (hud), by replacing it with transmission holographic lenses. holographic lenses are very light and can be manufactured at very low costs. applications of holographic… More

INTEGRATED OPTICS MACH ZEHNDER BASED INFRARED SENSOR

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$49,812.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Dr w t boord
Abstract:
A spectrally agile based upon a tunable filter can effectively measure infrared background, targets, and obscurant clouds. an integrated optics integrated filter (iotf) placed in front of the sensor focal plane or integrated with the focal plane detectors can be used to select waveband location and… More

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION OF ALGAN FOR SOLAR BLIND ULTRAVIOLET DETECTORS

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$49,485.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M A Khan
Abstract:
N/a

INTEGRATED OPTICS LASER CRT DISPLAY GENERATION

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$49,954.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Dr W T Boord
Abstract:
N/a

INTEGRATED OPTICS SCANNER FOR WAFER INTERCONNECT

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$49,674.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Anil K Jain
Abstract:
N/a

INTEGRATED OPTICS LASER CRT DISPLAY GENERATION

Award Year / Program / Phase:
1988 / SBIR / Phase II
Award Amount:
$494,000.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Dr W T Boord
Abstract:
The research for an alternate means to crt technology of generating visual display has been underway for years. the program proposed will define a method of producing a "crt" type of visual display using a laser scanning concept previously based on work at apa optics, inc. the previous work defined… More

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION OF ALGAN FOR SOLAR BLIND ULTRAVIOLET DETECTORS

Award Year / Program / Phase:
1988 / SBIR / Phase II
Award Amount:
$452,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M A Khan
Abstract:
Use of atomic layer epitaxy is being investigated for growing single crystal algan layers. the formation of nitrogen vacancies is expectedto be suppressed by the unique atomic layer depositions and the excitation of nh3 gas by a laser source. this should result in high quality large area single… More

HIGH SPEED OPTOELECTRONIC SWITCH

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$49,776.00
Agency:
NASA
Principal Investigator:
Dr lynn d hutcheson
Abstract:
Development of high speed switches and switching systems is critical to meet the throughput and interconnectivity needs of efficient high and low-data-rate fmd and tdm communication among a large network. in a typical scenario data from many processors and sensors must be transmitted and routed at… More

MEASUREMENT OF ELECTRO-OPTICAL PROPERTIES OF ALXGA1-XN FOR INTEGRATED OPTIC DEVICES

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$48,000.00
Agency:
NSF
Principal Investigator:
Dr m a khan
Abstract:
We propose a program to fabricate single mode symmetric waveguides in alxga1-xn, and to measure the electro-optical propoerties of the material system. our program is significant due to the potential of using alxga1-xn waveguides for unique electro-optic devices operating in theultraviolet and… More

SINGLE MODE FIBER OPTICS COUPLER

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$49,385.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Dr w t boord
Abstract:
The objectives of the proposal effort are to improve the reliability and to reduce the fabrication costs of single mode fiberoptics couplers by: 1. developing thick, single mode waveguides with identical cross sectional profile matching that of single mode fibers; and 2. locating these fibers to… More

HIGH SPEED GAAS/ALGAAS LASER DIODE MODULATOR

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$49,664.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M Asif Khan
Abstract:
N/a

EXTRAVEHICULAR MOBILITY UNIT HELMET MOUNTED DISPLAY

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$49,858.00
Agency:
NASA
Principal Investigator:
David E Stoltzmann
Abstract:
N/a

YBACUO-BASED SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR DETECTOR FOR LONG-WAVELENGTH INFRARED APPLICATIONS

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$49,954.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M Asif Khan
Abstract:
N/a

INTEGRATED OPTICS SCANNER FOR WAFER INTERCONNECT

Award Year / Program / Phase:
1989 / SBIR / Phase II
Award Amount:
$229,500.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Anil K Jain
Abstract:
Conventional interconnect and switching technology has been identified as a limitation in high thruput processors and computers. wafer scale integration is one technique to resolve interconnect problems. methods of interfacing to wafer scale devices will resolve interconnect problems. methods of… More

EXTRAVEHICULAR MOBILITY UNIT HELMET MOUNTED DISPLAY

Award Year / Program / Phase:
1989 / SBIR / Phase II
Award Amount:
$495,000.00
Agency:
NASA
Principal Investigator:
David E Stoltzmann
Abstract:
Helmet mounted display (hmd) systems present many potential benefits to overcome current display limitations of extravehicular spacesuits. in this phase i effort we propose to investigate the preliminary optical and mechanical designs for incorporating an hmd system with the extravehicular mobility… More

LOW THRESHOLD MULTIPLE QUANTUM WELL LASER FOR HIGH DENSITY ELECTRONIC PACKING APPLICATIONS

Award Year / Program / Phase:
1989 / SBIR / Phase I
Award Amount:
$49,993.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Dr M Asif Khan
Abstract:
Optical interconnect technology promises to provide significant relief from the pinout problem, decrease implementation complexity, and provide improvements to the flexibility and real-time reconfiguration for high density electronic packing applications such as vlsi/vhsic. optical interconnect… More

SURFACE ACOUSTIC WAVE DEVICE FOR WIDE ANGLE LASER SCANNING

Award Year / Program / Phase:
1989 / SBIR / Phase I
Award Amount:
$49,996.00
Agency:
NASA
Principal Investigator:
Dr Steven M Arnold
Abstract:
Laser beam scanning is required to support spacecraft terminal rendezvous, station-keeping, and docking. currently, acousto-optic bragg cells offer the best available means of scanning a laser beam without use of moving mechanical parts. bragg cells, however, are limited by their small angular… More

FABRICATION AND MEASUREMENT OF ELECTRICAL AND OPTICAL PROPERTIES OF GALIUM NITRIDE BASED MULTIPLE QUANTUM WELLS FOR VISIBLE AND UV OPTOELECTRONIC DEVICES

Award Year / Program / Phase:
1989 / SBIR / Phase I
Award Amount:
$49,562.00
Agency:
NSF
Principal Investigator:
M A Khan , Principal Investigator
Abstract:
The researchers propose a program to fabricate single crystal multiple quantum well structures in alxgal-xn, and to measure the electro-optical properties of the material system. their program is significant due to the potential of using alxgal-xn multiple quantum wells for unique electro-optic and… More

YBACUO-BASED SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR DETECTOR FOR LONG-WAVELENGTH INFRARED APPLICATIONS

Award Year / Program / Phase:
1990 / SBIR / Phase II
Award Amount:
$486,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M Asif Khan
Abstract:
Superconductor-insulator-superconductor (sis) junctions of high tc, ybacuo-type materials for long wavelength infrared (lwir) detection are being investigated. the feasibility is being determined of using gallium-arsenide as the substrate material for the high tc superconducting materials of the… More

HIGH SPEED GAAS/ALGAAS LASER DIODE MODULATOR

Award Year / Program / Phase:
1990 / SBIR / Phase II
Award Amount:
$492,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M Asif Khan
Abstract:
Key requirements remain in the development of gallium arsenide (gaas) monolithic microwave integrated circuits (mmics) to be used in communication systems, particularly in the frequencies of the ka band or higher. signal distribution for controlling and feeding signals to each element can be quite… More

FLAT PANEL MULTICOLOR DISPLAY BASED ON INTEGRATED OPTIC SCANNER

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,948.00
Agency:
NASA
Principal Investigator:
William Phillips , R & D Manager
Abstract:
The overall objective of the proposed effort is to develop a low power, compact multicolor, flat panel display. our approach is based on illuminating a 3-color phosphor screen with an infrared semiconductor laser diode and scanning it with an integrated optics based low power laser scanner. apa… More

HOLOGRAPHIC INTERFEROMETER FOR OPTICAL MEASUREMENT

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,996.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Dr Steven M Arnold
Abstract:
Multispectrum guidance systems are being developed which contain extremely small, non-spherical optical components for long wavelength ir seekers. the navy requires a noncontact method of testing these parts for conformance to specifications prior to their assembly into the system. apa optics… More

ALGAN ELECTRO-OPTIC WAVEGUIDE BEAM SCANNER

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,996.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Dr M Asif Khan
Abstract:
We propose a unique electro-optic lwir beam scanning device. this alxga1-xn planar waveguide based electro-optic device can be used either in a scanner or a receiver configuration. it has the potential of large field of view (20 degrees), fast random access and low power operation. the device is… More

ATOMIC LAYER CVD OF YBACUO OVER A LOW DIELECTRIC SUBSTRATE

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,940.00
Agency:
NASA
Principal Investigator:
M. Asif Khan , Vice President, Optoelectronic
Abstract:
We propose the deposition of high tc ybacuo layers, using atomic layer cvd over a composite alxga1-xas/alxga1-xn/sapphire substrate. the unique atomic layer process is expected to reduce the epitaxy temperature well below that required for conventional mocvd. this will eliminate the need for a post… More

A SOLID STATE BLUE LASER BASED ON GAN/ALXGAL-XN PN JUNCTION HETEROSTRUCTURE

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,994.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Dr M Asif Khan
Abstract:
In this proposal we discuss the development of a blue (potentially green and other wavelengths also) solid state laser based on pn-junction heterostructures in the aixga1-xn material system. these aixga1-xn based lasers will be ideal for uses in optical recording, communication and large screen… More

ALUMINUM-GALLIUM-NITROGEN BASED SOLID STATE PHOTOMULTIPLIER FOR SOLAR BLIND UV DETECTION

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,996.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M Asif Khan
Abstract:
N/a

HIGH SPEED TRAVELING WAVE MODULATORS

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,929.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M Asif Khan
Abstract:
N/a

ALUMINUM-GALLIUM-NITRIDE BASED INTEGRATED FILTER THREAT WARNING DETECTOR ASSEMBLY AND SOLAR BLIND UV DETECTION

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,977.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M Asif Khan
Abstract:
N/a

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION OF BISMUTH-CALCIUM-STRONTIUM COPPER-OXYGEN OVER A LOW DIELECTRIC SUBSTRATE

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$49,996.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M Asif Khan
Abstract:
N/a

SOLID STATE LASER SCANNER FOR LASER ORDNANCE INITIATOR

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$49,968.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr W T Boord , Principal Investigator
Abstract:
N/a

METALORGANIC ATOMIC LAYER EPITAXY FOR YBACUO SIS DETECTOR FABRICATION

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$49,982.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
M Khan , Principal Investigator
Abstract:
N/a

VERTICAL CAVITY SURFACE EMITTING LASER MODULES FOR OPTICAL COMMUNICATION AND SIGNAL PROCESSING

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$49,995.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M Asif Khan , Principal Investigator
Abstract:
N/a

SOLID STATE LASER SCANNER FOR LASER ORDNANCE INITIATOR

Award Year / Program / Phase:
1992 / SBIR / Phase II
Award Amount:
$499,978.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr W T Boord , Principal Investigator
Abstract:
This proposal addresses the development of a solid state laser scanner for routing a high energy laser beam among the fiber optic energy transfer paths of a laser ordnance initiation system. a solid state laser scanner with no moving parts will enable a more compact and durable laser ordnance… More

METALORGANIC ATOMIC LAYER EPITAXY FOR YBACUO SIS DETECTOR FABRICATION

Award Year / Program / Phase:
1992 / SBIR / Phase II
Award Amount:
$249,713.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
M Khan , Principal Investigator
Abstract:
This proposal describes a phase i program aimed at developing superconductor insulator superconductor (sis) detectors in thin films of ybacuo deposited on srtio3 substrates. when operatedin the quantum mode, our proposed htc based sis detector can potentially have a very high sensitivity for lwir… More

VERTICAL CAVITY SURFACE EMITTING LASER MODULES FOR OPTICAL COMMUNICATION AND SIGNAL PROCESSING

Award Year / Program / Phase:
1992 / SBIR / Phase II
Award Amount:
$500,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr M Asif Khan , Principal Investigator
Abstract:
Vertical cavity surface emitting lasers are under development at several u.s. labs which consist of a gaas/algaas quantum well fabry-perot cavity sandwiched between n and p doped high reflectivity semiconductor mirrors (gaas/algaas quarter wave stacks). our phase i research proves the feasiblity of… More

TRANSPARENT ELECTRODE VERTICAL CAVITY SURFACE EMITTING LASERMODULES FOR OPTICAL COMMUNICATION & SIGNAL PROCESSING APPLICATIONS.

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$49,945.00
Agency:
NSF
Principal Investigator:
Dr Jim Van Hove
Abstract:
High speed optical links are finding ever increasing uses inoptical communications and signal processing applications. currently available planar waveguide lasers used in these links suffer from a high insertion loss due to a mode mismatch between the fiber and the modulator and the inability to… More

ALUMINUM GALLIUM NITRIDE HETEROSTRUCTURES FOR HIGH TEMPERATURE TRANSISTOR AND SENSOR APPLICATIONS

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$49,938.00
Agency:
NSF
Principal Investigator:
Dr. M. Asif Khan
Abstract:
The proposed program is aimed at developing alx ga1-xn/gan heterostructure devices for high temperature sensor and electronics applications. we will focuss on an alxga1-xn based high electron mobility transistor (or hemt) for use asa high temperature microwave device or as a sensitive ultraviolet… More

A BURIED ELECTRODE MACH ZEHNDER WAVEGUIDE INTENSITY MODULATOR WITH OPERATION SPEEDS IN EXCESS OF 100 GHZ

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$48,791.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Dr. Jim M. Vanhove
Abstract:
This proposal describes an apa optics program to develop a high speed (100ghz) gaas waveguide based mach zehnder modulator. our approach centers on the use of a buried electrode configuration to achieve velocity matching of the rf and optical signals. this we feel will result in a device with a… More

AlxGa(1-x)N High Electron Mobility Transistors for High Temperature Applications

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$49,586.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Dr. Jim M. Van Hove
Abstract:
GaN high electron mobility transistors or HEMTs are proposed for use as high temperature electronic devices. HEMTs are excellent for both power and low noise amplification since they posses a high carrier concentration and an enhanced carrier mobility. GaN has a large bandgap of 3.2 a, which gives… More

ATOMIC LAYER EPITAXY OF BORON NITRIDE

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$49,997.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr M. Asif Khan
Abstract:
We propose a phase i research program aimed at depositing single crystal bn films over sapphire and silicon carbide substrates. our plan is to employ a unique photo-assisted switched atomic layer epitaxy process. this we feel will reduce the single crystal epitaxy temperature values close to 1400c.… More

GaAs/GaN Strained Layer Superlattice Material for High Temperature Transistors

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$49,987.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Jonathan Kuznia
Abstract:
Electronic devices which operate at high temperatures could be used in many military and commercial systems. GaAs and Si based devices cannot operate at these temperatures and require cooling. Wide bandgap material such as diamond, SiC and GaN have greater breakdown voltages, higher operating… More

A Phototransistor Based on GaN-A1xGa1-xN Heterostructure

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$49,997.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr M. Asif Khan
Abstract:
We propose to demonstrate the feasibility of fabricating a phototransistor using the A1xGa1-xN material system. The proposed phototransitor is based on a GaN-A1xGa1-xN heterojunction which exhibits a 2-D electron gas conduction when a bias is applied on the source-drain terminals. The device is… More

Optoelectronic Integrated Circuits Based on Single Crystal GaN Waveguides

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$51,282.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr. M. Asif Khan
Abstract:
N/a

WAVELENGTH DIVISION MULTIPLEXED OPTICAL MODULATOR FOR ADVANCED COMMUNICATION SYS

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$49,986.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
W. T. Boord
Abstract:
N/a

Optoelectronic Integrated Circuits Based on Single Crystal GaN Waveguides

Award Year / Program / Phase:
1994 / SBIR / Phase II
Award Amount:
$625,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr. M. Asif Khan
Abstract:
We propose the exploration of single crystal GaN waveguides for the fabrication of optoelectronic integrated circuits. The feasibility of using GaN for short wavelength (up to 365 nm) OEIC's will be established in Phase I via the demonstration of a channel waveguide based phase shifter. The Al(sub… More

WAVELENGTH DIVISION MULTIPLEXED OPTICAL MODULATOR FOR ADVANCED COMMUNICATION SYS

Award Year / Program / Phase:
1994 / SBIR / Phase II
Award Amount:
$375,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
W. T. Boord
Abstract:
We propose to demonstrate the design, fabrication, and performance of an integrated optic based device which provides for both multiplexing and independent external modulation of three closely spaced wavelengths emitted by a multi-longitudinal mode laser. The innovative aspect of the proposed device… More

Growth of Bulk Single Crystal AlN Substrates for AlxGa1-xn Epitaxy

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$99,984.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
M. Khan
Abstract:
We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1-xN epitaxy. Our approach is to use a low pressure, high temperature (2000 C) furnace with a temperature gradient between the A1N charge and the deposition… More

Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$99,185.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
M. Asif Khan
Abstract:
N/a

Multicolor UV Seeker Based on GaN/GaAs Heterostructures

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$49,967.00
Agency / Branch:
DOD / MDA
Principal Investigator:
M. Asif Khan, Phd
Abstract:
N/a

Multicolor UV Seeker Based on GaN/GaAs Heterostructures

Award Year / Program / Phase:
1995 / SBIR / Phase II
Award Amount:
$299,975.00
Agency / Branch:
DOD / MDA
Principal Investigator:
M. Asif Khan, Phd
Abstract:
APA Optics will develop a monolithic UV seeker for use in flame sensing and passive or tactical threat warning systems. The key to the technical approach is the deposition of high optical/electrical quality Al(x)Ga(1-x)N over GaAs substrates and using it to fabricate back to back Schottky barrier… More

Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy

Award Year / Program / Phase:
1995 / SBIR / Phase II
Award Amount:
$680,445.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
M. Asif Khan
Abstract:
We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1xN epitaxy. Our approach is to use a low pressure, high temperature (>>2000oC) furnace with a temperature gradient between the A1N charge and the… More

GaN/AlN Based High Voltage Heterostructure Transistor

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$84,991.00
Agency / Branch:
DOD / MDA
Principal Investigator:
M. Asif Khan
Abstract:
High voltage semiconductor devices have found important applications in the areas of high power generation, power control, power conversion, surge protection, and industrial electronics. However, GaAs or Si based high voltage device are limited by a relatively low intrinsic breakdown voltage… More

Development of Compliant Substrates for GaN Epitaxy

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$99,999.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Dr. Jinwei Yang
Abstract:
We propose a six month Phase I research program aimed at developing compliant substrates for the epitaxy of GaN and AlGaN films. We present two alternate approaches one with silicon and the other with GaAs as the starting substrate material and a unique multilayer structure to be deposited using low… More

A GaN-A1GaN CCD for UV Imaging Applications

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$79,943.00
Agency / Branch:
DOD / USAF
Principal Investigator:
M. Asif Khan
Abstract:
N/a

A GaN-A1GaN CCD for UV Imaging Applications

Award Year / Program / Phase:
1996 / SBIR / Phase II
Award Amount:
$696,834.00
Agency / Branch:
DOD / USAF
Principal Investigator:
M. Asif Khan
Abstract:
We propose a unique GaN-Al(sub x)Ga(sub 1-x)N heterojunction based CCD for imaging in the ultraviolet (wavelengths less than 365 nm). Our proposed device will be solid state, TTL compatible and in it's final configuration solar blind. The Phase I program is aimed at establishing the technical… More