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Apa Optics, Inc.
UEI: N/A
# of Employees: 24
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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A GaN-A1GaN CCD for UV Imaging Applications
Amount: $696,834.00We propose a unique GaN-Al(sub x)Ga(sub 1-x)N heterojunction based CCD for imaging in the ultraviolet (wavelengths less than 365 nm). Our proposed device will be solid state, TTL compatible and in it' ...
SBIRPhase II1996Department of Defense Air Force -
Multicolor UV Seeker Based on GaN/GaAs Heterostructures
Amount: $299,975.00APA Optics will develop a monolithic UV seeker for use in flame sensing and passive or tactical threat warning systems. The key to the technical approach is the deposition of high optical/electrical q ...
SBIRPhase II1995Department of Defense Missile Defense Agency -
Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy
Amount: $680,445.00We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1xN epitaxy. Our approach is to use a low pressure, high ...
SBIRPhase II1995Department of Defense Defense Advanced Research Projects Agency -
GaN/AlN Based High Voltage Heterostructure Transistor
Amount: $84,991.00High voltage semiconductor devices have found important applications in the areas of high power generation, power control, power conversion, surge protection, and industrial electronics. However, GaAs ...
SBIRPhase I1995Department of Defense Missile Defense Agency -
Development of Compliant Substrates for GaN Epitaxy
Amount: $99,999.00We propose a six month Phase I research program aimed at developing compliant substrates for the epitaxy of GaN and AlGaN films. We present two alternate approaches one with silicon and the other with ...
SBIRPhase I1995Department of Defense Navy -
A GaN-A1GaN CCD for UV Imaging Applications
Amount: $79,943.00N/A
SBIRPhase I1995Department of Defense Air Force -
Optoelectronic Integrated Circuits Based on Single Crystal GaN Waveguides
Amount: $625,000.00We propose the exploration of single crystal GaN waveguides for the fabrication of optoelectronic integrated circuits. The feasibility of using GaN for short wavelength (up to 365 nm) OEIC's will be e ...
SBIRPhase II1994Department of Defense Air Force -
WAVELENGTH DIVISION MULTIPLEXED OPTICAL MODULATOR FOR ADVANCED COMMUNICATION SYS
Amount: $375,000.00We propose to demonstrate the design, fabrication, and performance of an integrated optic based device which provides for both multiplexing and independent external modulation of three closely spaced ...
SBIRPhase II1994Department of Defense Navy -
Growth of Bulk Single Crystal AlN Substrates for AlxGa1-xn Epitaxy
Amount: $99,984.00We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1-xN epitaxy. Our approach is to use a low pressure, hig ...
SBIRPhase I1994Department of Defense Defense Advanced Research Projects Agency -
Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy
Amount: $99,185.00N/A
SBIRPhase I1994Department of Defense Defense Advanced Research Projects Agency