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ATOMIC LAYER CVD OF YBACUO OVER A LOW DIELECTRIC SUBSTRATE

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
11890
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
11890
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Apa Optics, Inc.
2950 Ne 84th Lane Blaine, MN 55449
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1990
Title: ATOMIC LAYER CVD OF YBACUO OVER A LOW DIELECTRIC SUBSTRATE
Agency: NASA
Contract: N/A
Award Amount: $49,940.00
 

Abstract:

WE PROPOSE THE DEPOSITION OF HIGH TC YBACUO LAYERS, USING ATOMIC LAYER CVD OVER A COMPOSITE ALXGA1-XAS/ALXGA1-XN/SAPPHIRE SUBSTRATE. THE UNIQUE ATOMIC LAYER PROCESS IS EXPECTED TO REDUCE THE EPITAXY TEMPERATURE WELL BELOW THAT REQUIRED FOR CONVENTIONAL MOCVD. THIS WILL ELIMINATE THE NEED FOR A POST DEPOSITION ANNEAL. OUR SUBSTRATE STACK IS ALSO UNIQUE. IT HAS A DIELECTRIC CONSTANT MUCH LOWER AND THERMAL CONDICTIVITY AND MECHANICAL STRENGTH MUCH SUPERIOR THAN GAAS. PHASE I EFFORT WILL THEREFORE LEAD TO A MULTILAYER STACK WELL SUITED FOR FABRICATION OF HIGH FREQUENCY LOW LOSS MMIC CIRCUITS WITH SUPERCONDUCTOR ELECTRODES. THE SIX MONTH PHASE I PROGRAM WILL SIGNIFICANTLY BENEFIT FROM OUR RELATED WORK ON HTC SUPERCONDUCTOR DEPOSITION AND SINGLE CRYSTAL MULTILAYER ALXGA1-XAS/ALXGA1-XN DEPOSITIONS OVER SAPPHIRE SUBSTRATES. THE RESULTING FILMS WILL BE CHARACTERIZED FOR THEIR SUPERCONDUCTING TRANSITION TEMPERATURES. PHASE II WILL FOCUS ON THE FABRICATION OF INTEGRATED MMIC DEVICES.

Principal Investigator:

M. Asif Khan
Vice President, Optoelectronic
6127844995

Business Contact:

Anil k. jain
PRESIDENT
6127844995
Small Business Information at Submission:

Apa Optics, Inc.
2950 N.e. 84th Lane Blaine, MN 55434

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No