Optoelectronic Integrated Circuits Based on Single Crystal GaN Waveguides
Agency / Branch:
DOD / USAF
We propose the exploration of single crystal GaN waveguides for the fabrication of optoelectronic integrated circuits. The feasibility of using GaN for short wavelength (up to 365 nm) OEIC's will be established in Phase I via the demonstration of a channel waveguide based phase shifter. The Al(sub x)GA(sub 1-x)N material system with its transparency from 365 nm to 12 microns, tunable refractive index (with alloy composition) and a high electro-optic coefficient is an excellent choice for fabricating short wavelength waveguide devices. It also has been deposited in excellent single crystal form over substrates such as sapphire, GaAs and silicon which makes possible integration of control and driver electronics along with the guided wave components. With our demonstration of GaN planar waveguides and measurement of the material electro-optic coefficient we are in a good position to demonstrate a channel waveguide based phase shifter in Phase I. This will be followed by the fabrication of an active OEIC component such as a modulator in the Phase II effort.
Small Business Information at Submission:
Principal Investigator:Dr. M. Asif Khan
Apa Optics, Inc.
2950 Ne 84th Lane Blaine, MN 55449
Number of Employees: