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GaN/AlN Based High Voltage Heterostructure Transistor

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
28350
Program Year/Program:
1995 / SBIR
Agency Tracking Number:
28350
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Apa Optics, Inc.
2950 Ne 84th Lane Blaine, MN 55449
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1995
Title: GaN/AlN Based High Voltage Heterostructure Transistor
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $84,991.00
 

Abstract:

High voltage semiconductor devices have found important applications in the areas of high power generation, power control, power conversion, surge protection, and industrial electronics. However, GaAs or Si based high voltage device are limited by a relatively low intrinsic breakdown voltage and,therefore, inherently suited for high power applications. We propose to develop novel high voltage heterojunction field effect transistor device structures based on the AlGaN material system. These devices should lead to a considerably larger breakdown voltages and breakdown electric fields. Phase I will determine the material and contact issues responsible for the high field breakdown. Based on the obtained results, models and designs for high voltage GaN based devices and integrated circuits will be developed. High voltage and high power control, power conversion, surge protection, and industrial electronics that operate in adverse conditions.

Principal Investigator:

M. Asif Khan
6127844995

Business Contact:

Small Business Information at Submission:

Apa Optics, Inc.
2950 Ne 84th Lane Blaine, MN 55449

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No