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Company Information:

Company Name:
Applied Ceramics Research Co.
Address:
1420 Owl Ridge Dr.
Colorado Springs, CO 80919
Phone:
(719) 948-2109
URL:
N/A
EIN:
N/A
DUNS:
42981659
Number of Employees:
3
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $258,500.00 4
SBIR Phase II $727,890.00 1

Award List:

Metal-Ferroelectric-Insulator Field Effect Transistor (MFISFET) for Radiation Hardened, Non-Destructive-Read-Out (NDRO) Nonvolatile Memory

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$64,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Lee Kammerdiner
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$64,500.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Abstract:
N/a

Non-Volatile Memory based on Silicon-nanocrystals

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$65,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Abstract:
Recently, there has been more emphasis on a system-on-a-chip (SOC) to integrate logic, analog functions, volatile and non-volatile memory onto a single chip. In order to overcome limitations of conventional floating gate non-volatile memory devices, we areproposing the non-volatile memory elements… More

Novel Ferroelectric Thin Film Materials for Radiation Hard, Non-Destructive Read Out (NDRO) Non-volatile Memory

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$65,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Lee Kammerdiner, President
Abstract:
This Small Business Innovation Research Phase I project proposes the development of novel materials to be used in a ferroelectric FET (Field Effect Transistor) memory cell. The proposed memory cell is non-volatile utilizing a non-destructive readout,single transistor design. As a result it has… More

A Superior High Dielectric Constant Capacitor with Nickel Electrodes for Use in Integrated Circuits

Award Year / Program / Phase:
2002 / SBIR / Phase II
Award Amount:
$727,890.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Abstract:
"The use of high dielectric constant materials in semiconductor integrated circuits is greatly expanded due to their obvious advantage of providing higher capacitance per unit area compared to the more conventional silicon oxide/silicon nitride capacitors.There are at least three general areas where… More