USA flag logo/image

An Official Website of the United States Government

Company Information:

Company Name: APPLIED OPTOELECTRONICS, INC.
City: Sugar Land
State: TX
Zip+4: 77478
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: (281) 242-2588

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $933,528.00 14
SBIR Phase II $4,360,247.00 6

Award List:

Electrically Pumped Type-II Quantum Well Lasers at 4um

Award Year / Program / Phase: 1998 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Chih-hsiang Lin
Award Amount: $732,298.00
Abstract:
We will develop high-temperature high-power mid-infrared (2-5 micron) diodes based on InAs/InGaSb/InAlSb type-II quantum wells. In pulse mode operation, we will investigate the pulse-to-pulse reproducibility with repetition rates > 50 KHz. Recently, we have demonstrated room-temperature optically… More

Multi-color Quantum Cascade Mid-Infrared Sources at 2.5 to 5 ym

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Chih-hsiang Lin
Award Amount: $64,612.00
Abstract:
We propose to develop multi-color mid-infrared (IR) sources at 2.5 to 5 um based on InAs/InGaSb type-II quantum cascade (QC) structures. A compact mid-IR dual wavelength source could be extremely useful for the environmental gas and pollutant sensing, such as differential absorption lidar, where the… More

SBIR Phase I: Type-II Mid-Infrared Lasers Grown on Compliant Universal Substrates

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency: NSF
Principal Investigator: Chih-Hsiang Lin
Award Amount: $99,405.00

N/A

Award Year / Program / Phase: 1999 / SBIR / Phase II
Agency: NSF
Principal Investigator: Chih-Hsiang Lin
Award Amount: $399,614.00

InAs/InGaSb Type-II Superlattice for Mid-IR Photodetectors

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Chih-Hsiang Lin
Award Amount: $99,919.00

Growth of the large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetectors array on GaAs compliant substrate

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Chau-Hong Kuo
Award Amount: $64,966.00

InAs/InGaSb Type-II Superlattice for Mid-IR Photodetectors

Award Year / Program / Phase: 2000 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Alex Anselm
Award Amount: $749,985.00

Growth of the large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetectors array on GaAs compliant substrate

Award Year / Program / Phase: 2000 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Chih Lin
Award Amount: $749,587.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Wen-Yen Hwang, Senior Scientist
Award Amount: $64,983.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Sergey Zaitsev, Senior Scientist
Award Amount: $64,993.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Wen-Yen Hwang, Senior Scientist
Award Amount: $64,993.00

Single-Mode DFB InGaAsP lasers at 1.8 to 2.2 um

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency: NASA
Principal Investigator: Dr. James 1. baillargeon, VP for Laser Technology
Award Amount: $69,844.00
Abstract:
We propose to develop single-mode DFB lasers at 1.8 to 2.2 um based on InGaAsP materails at room temperature with a linewidth of 0.1 to 0l.2 MHz. MBE regrowth technology will be used for the grating. We will also study the device reliability. A compact mid-IR single mode laser could be extremely… More

Advanced Long Wavelength Infrared Detectors using InAs/GaInSb Strained Layer Sup

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency: NASA
Principal Investigator: Alex Anselm, Research Scientist
Award Amount: $69,979.00
Abstract:
Infrared photodetectors operating in the wavelength range of 3-20 mm and beyond are of great importance to a wide variety of ongoing and future NASA missions, as well as many commercial and military applications in infrared (IR) imaging and sensing. Hence, there is a constant pursuit of advances in… More

Distributed Feedback Quantum Cascade Lasers for Trace Gas Detection

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency: NASA
Principal Investigator: James Baillargeon, Vice President
Award Amount: $69,844.00
Abstract:
This proposal concerns the fabrication and delivery of the Quantum Cascade (QC) semiconductor laser as a coherent light source operating in the mid-infrared region of the optical spectrum. This laser is unique as a semiconductor laser in that it utilizes only one carrier type, electrons, from… More

Single Mode Type-I QC DFB Lasers at 10 Micron for Gas Sensing

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency: DOE
Principal Investigator: Stefan J. Murry
Award Amount: $99,995.00
Abstract:
70560 New mid-infrared laser sources, such as the Quantum Cascade (QC) laser, are necessary to develop advanced and inexpensive gas sensing systems to monitor industrial-related chemical processes, including combustion and pollution effluent. This project will develop QC lasers with… More

Continuous-Wave Thermoelectric-Cooled 5.26 Micron QC Laser for Chemical Sensing

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency: DOE
Principal Investigator: Stefan J. Murry
Award Amount: $99,995.00
Abstract:
70559 New mid-infrared laser sources, such as the Quantum Cascade (QC) laser, are necessary to develop advanced and inexpensive gas sensing systems to monitor chemical processes, including combustion and pollution effluent, for national security applications. This project will develop… More

Growth of large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetector arrays on compliant substrate

Award Year / Program / Phase: 2003 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Lin, Senior Scientist
Award Amount: $749,587.00
Abstract:
InAs/InGaSb type-II superlattices have advantages over HgCdTe for photodetectors requiring higher temperature and longer wavelength operation. The type-II QW photodiodes have comparable quantum efficiency, smaller dark current due to a larger effectivemass, much slower Auger recombination rates,… More

Growth of large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetector arrays on compliant substrate

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Lin, Senior Scientist
Award Amount: $0.00
Abstract:
InAs/InGaSb type-II superlattices have advantages over HgCdTe for photodetectors requiring higher temperature and longer wavelength operation. The type-II QW photodiodes have comparable quantum efficiency, smaller dark current due to a larger effectivemass, much slower Auger recombination rates,… More

Multi-Color Quantum Cascade Mid-IR Sources at 2.5 to 5 um

Award Year / Program / Phase: 2003 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Hwang, Senior Scientist
Award Amount: $0.00
Abstract:
A compact mid-IR dual wavelength laser is highly' desirable for the environmental gas and pollutant sensing, such as differential absorption lidar, where the light scattering has to be evaluated and compared at two different wavelengths. In the phase-Iproject, we have demonstrated the first… More

Multi-Color Quantum Cascade Mid-IR Sources at 2.5 to 5 um

Award Year / Program / Phase: 2003 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Hwang, Senior Scientist
Award Amount: $979,176.00
Abstract:
A compact mid-IR dual wavelength laser is highly' desirable for the environmental gas and pollutant sensing, such as differential absorption lidar, where the light scattering has to be evaluated and compared at two different wavelengths. In the phase-Iproject, we have demonstrated the first… More