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Electrically Pumped Type-II Quantum Well Lasers at 4um

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
36120
Program Year/Program:
1998 / SBIR
Agency Tracking Number:
36120
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
APPLIED OPTOELECTRONICS, INC.
242 Kingfisher Dr. Sugar Land, TX 77478
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1998
Title: Electrically Pumped Type-II Quantum Well Lasers at 4um
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $732,298.00
 

Abstract:

We will develop high-temperature high-power mid-infrared (2-5 micron) diodes based on InAs/InGaSb/InAlSb type-II quantum wells. In pulse mode operation, we will investigate the pulse-to-pulse reproducibility with repetition rates > 50 KHz. Recently, we have demonstrated room-temperature optically pumped lasers from 2.8 to 4.5 microns based on InAs/InGaSb/InAs/AlSb type-II quantum wells. For 4.5 micron devices, lasing was observed up to 310 K, and the peak output power per facet was more than 3.65 W at 160 K and about 360 mW and 280 K. For 350 K 3.2 micron lasers, the maximum peak output power per facet was more than 260 mW at room temperature. Electrically-pumped lasers based on type-II superlattice have also been demonstrated. Since the Auger non-radiative recombination rate could be suppressed by more than two orders of magnitude using bandgap engineering, the radiative efficiency and hence power efficiency could be dramatically improved.The Phase I effort will be directed towards the demonstrations of room-temperature high-power optically-pumped lasers and high-temperature electrically-pumped laser diodes with high repetition rates.

Principal Investigator:

Chih-hsiang Lin
2817823855

Business Contact:


0
Small Business Information at Submission:

APPLIED OPTOELECTRONICS, INC.
242 Kingfisher Houston, TX 77096

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No