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Growth of large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetector…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
64474
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
99-0128
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
APPLIED OPTOELECTRONICS, INC.
242 Kingfisher Dr. Sugar Land, TX 77478
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2003
Title: Growth of large two-dimensional 8-15 um InAs/InGaSb type-II SL photodetector arrays on compliant substrate
Agency / Branch: DOD / MDA
Contract: F3361500C5405
Award Amount: $749,587.00
 

Abstract:

InAs/InGaSb type-II superlattices have advantages over HgCdTe for photodetectors requiring higher temperature and longer wavelength operation. The type-II QW photodiodes have comparable quantum efficiency, smaller dark current due to a larger effectivemass, much slower Auger recombination rates, and hence much longer carrier lifetimes. Through careful bandgapengineering, we have suppressed the Auger coefficient by a factor of >8 for 4.5 -um type-II lasers at 300 K. In the phase-I program, we havedemonstrated many high-performance photoconductors directly grown on compliant GaAs substrates with a cutoff wavelength from 11 um to 19 um. We have also demonstrated and dramatically improved the quality of 2-inch compliant GaAs substrates. With theimprovement of materials growth and compliant substrates, more than a factor of 1500 of improvement has been achieved in the photoresponse. Further investigations will be performed to optimize the compliant substrates. Additionally, the coherenttunneling at the mesa-surface is the performance pitfall for ungated SLs mesa devices. To solve this issue, we propose to develop the surface passivation technology using sulfide materials to eliminate the side-wall leakage current. Therefore, we will beable to demonstrate large photodiode arrays with a detectivity >5x1012 cmHz 0.5/W at a wavelength of 14, um at 55 K.Critical military needs include missile defense, remote chemical sensing for defense against biological/chemical warfare, and medical.Commercial markets include leak detection, chemical process control, remote chemical sensing for atmospheric pollution and drug monitoring, IR spectroscopy, and medical diagnoses. With the development of high-performance photodectors, this program shouldconsiderably accelerate the commercialization of mid-IR photodetectors to meet the potential needs of the huge defense and commercial market

Principal Investigator:

Lin
Senior Scientist
2812422588

Business Contact:

Lin
President
2812422588
Small Business Information at Submission:

APPLIED OPTOELECTRONICS, INC.
242 Kingfisher Dr. Sugar Land, TX 77478

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No