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Company Information:

Company Name:
Applied Optronics Corporation
Address:
111 Corporate Boulevard,
Building J
South Plainfield, NJ 07080
Phone:
(908) 753-6300
URL:
N/A
EIN:
N/A
DUNS:
N/A
Number of Employees:
N/A
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $146,784.00 3
SBIR Phase II $366,000.00 1

Award List:

Advanced Fiber Coupled Semiconductor Lasers: A Compact 10 Watt Demonstrator

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$46,322.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr. C. J. Hwang
Abstract:
Because of the extreme compactness, very good portability, reliability, and ease-of-use of the diode lasers, high power systems that combine the light from several diode lasers offer significant ergonomic and economic advantages over solid state lasers in many applications. Applied Optronics Corp… More

MOCVD Growth and Fabrication of High Power Mid-Infrared GaInAsSb/GaAs Diode Lasers for Operation at 2 - 5 Microns

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$50,967.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr. Kevin Ma
Abstract:
N/a

MOCVD Growth and Fabrication of High Power Mid-Infrared GaInAsSb/GaAs Diode Lasers for Operation at 2 - 5 Microns

Award Year / Program / Phase:
1994 / SBIR / Phase II
Award Amount:
$366,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr. Kevin Ma
Abstract:
It is the goal of Applied Optronics to develop, fabricate and package antimony alloy diode lasers capable of high power operation at wavelengths between 2 and 5 microns, and to design a practical, high performance master oscillator power amplifier (MOPA) device based on antimony alloy diode lasers.… More

Development of Visible Diode Lasers by Using I-III-VI2 Semiconductor

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$49,495.00
Agency:
DOC
Principal Investigator:
Jennhwa Fu
Abstract:
The proposed Phase 1 approach utilizes a material system, the I-III-VI2 compounds, for which some early success in the fabrication of laser devices and LEDs has been achieved in Japan. The benefits to this material include: ease in forming p-n junction, greater thermal conductivity, higher bond… More