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DIAMOND P/N JUNCTION FORMATION FOR HIGH TEMPERATURE RADIATION RESISTANT…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
9450
Program Year/Program:
1989 / SBIR
Agency Tracking Number:
9450
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Applied Sciences, Inc.
141 W. Xenia Ave. PO Box 579 Cedarville, OH 45314-
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1989
Title: DIAMOND P/N JUNCTION FORMATION FOR HIGH TEMPERATURE RADIATION RESISTANT ELECTRONICS
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $50,035.00
 

Abstract:

CRYSTALLINE DIAMOND HAS OUTSTANDING POTENTIAL FOR USE AS A HIGH TEMPERATURE RADIATION TOLERANT ELECTRONIC MATERIAL. RECENTLY A JAPANESE GROUP WAS ABLE TO GROW LARGE AREA N-TYPE AS WELL AS P-TYPE DIAMOND CRYSTALS BY DOPING DURING VAPOR PHASE GROWTH. THE PURPOSE OF THE PROPOSED RESEARCH IS TO GROW N-TYPE DIAMOND ON TOP OF P-TYPE DIAMOND TO FORM A PN JUNCTION, AND TO ASSESS THE QUALITY OF THE DIODES THUS FORMED. IF GOOD JUNCTIONS CAN BE DEMONSTRATED IN PHASE I THEN BIPOLAR TRANSISTOR FORMATION AND PERFORMANCE EVALUATION WILL BE MADE IN PHASE II.

Principal Investigator:

Max L Lake
5137671477

Business Contact:

Small Business Information at Submission:

Applied Sciences Inc
Po Box 186 - 800 Livermore St Yellow Springs, OH 45387

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No