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Name: Applied Semiconductor
Address: 2825 Broadwell Dr
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Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $60,000.00 1

Award List:

Nitrogen Source for Molecular Beam Epitaxy by Photofragmentation of Ammonia

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: John C. Roberts
Award Amount: $60,000.00
Epitaxial growth of the aluminum gallium nitride (AlGaN) material system by molecular beam epitaxy (MBE) has been hindered by the lack of a suitable nitrogen source. The deposition of AlGaN at typical MBE growth temperatures results in nitrogen deficient films that suffer from low growth rates and… More