Award Year / Program / Phase:1994 / SBIR / Phase I
Agency / Branch:DOD / USAF
Principal Investigator:John C. Roberts
Award Amount:$60,000.00
Abstract:
Epitaxial growth of the aluminum gallium nitride (AlGaN) material system by molecular beam epitaxy (MBE) has been hindered by the lack of a suitable nitrogen source. The deposition of AlGaN at typical MBE growth temperatures results in nitrogen deficient films that suffer from low growth rates and… More