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Quantum Cascade Laser fabrication by Metal-Organic Chemical Vapor Deposition Growth Techniques for Mid-Infrared Spectral Range

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-06-C-0189
Agency Tracking Number: N061-014-1089
Amount: $79,792.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N06-014
Solicitation Number: 2006.1
Timeline
Solicitation Year: 2006
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-04-06
Award End Date (Contract End Date): 2007-03-30
Small Business Information
1335 W. Foothill Blvd.
Azusa, CA 91702
United States
DUNS: 077485527
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dick Chen
 CEO
 (626) 969-0681
 dchen@archcomtech.com
Business Contact
 Norman Kwong
Title: CTO
Phone: (626) 969-0681
Email: nkwong@archcomtech.com
Research Institution
N/A
Abstract

We propose to develop CW Quantum Cascade (QC) Lasers based on strain-balanced GaInAs/AlInAs/InP quantum well (QW) system using MOCVD growth techniques. We will design and fabricate lasers operate in the 4.5-4.8 ìm mid-IR wavelength region with high output power (>500 mW) at TE cooler temperature or room temperatures. Also, we will collaborate with Jet Propulsion Laboratory (JPL) to develop type-II interband cascade lasers as a second approach to achieve the objectivesBENEFITS: Successful developing high power CW mid-infrared light sources will significantly advance the fields such as chemical sensing, infrared countermeasure (IRCM), IR illumination, IR communications, laser surgery, industrial process control, and IR radar for aircraft and automobiles. Semiconductor mid-infrared light sources have considerable advantages in terms of cost, volume, weight, simplicity of design, reliability, and overall performance.

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