Development for Radiation Hardened Applications of Advanced Electronics Materials, Processes, and Devices
Agency / Branch:
DOD / MDA
The Missile Defense Agency (MDA) seeks technical investigations related to the development and application of advanced electronic materials, processes, and devices to meet its need for radiation hardened, high performance electronics for critical space and missile applications. With the advent of smaller transistor dimensions and reductions in price per bit, significant changes in materials and processes have been required to achieve these goals. More recent advancements have allowed semiconductor technology to push further into the nanoscale regime. However, these advancements are becoming more difficult and at an increased cost. As a result, new advanced materials, processes, and devices are required to continue the trend for higher functional density and decreased cost in terms of function. As result, we are planning to demonstrate our methods for increasing radiation hardness in the development of radiation hardened (rad-hard) SRAM architecture. The radiation hardened SRAM to be designed will provide inherent protection from TID, and immunity against single event latch up, and single event effect.
Small Business Information at Submission:
Research Institution Information:
RNET Technologies, Inc.
240 W. Elmwood Dr. Suite 2010 Dayton, OH 45459
Number of Employees:
Sponsored Program Services
610 Purdue Mall, Hovde Hall
West Lafayette, OH 47907