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Company Information:

Name: ASTRALUX, INC.
Address: 2500 CENTRAL AVE.
# 286
Boulder, CO 80301 2845
Located in HUBZone: No
Woman-Owned: No
Minority-Owned: No
URL: N/A
Phone: (303) 413-1440

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $2,293,682.00 32
SBIR Phase II $4,126,150.00 9
STTR Phase I $201,609.00 3

Award List:

IV-II-VI Wide Bandgap Alloys and Superlattices

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Christopher Walker, Phd
Award Amount: $50,000.00
Abstract:
Astralux will develop IV-II-VI compound semiconductors by synthesizing compounds and characterizing their properties as a function of the deposition parameters. The material will be a combination of lattice-matched semiconductors that will be generated as alloys and superlattices. Electronic and… More

High Temperature Optoelectronics

Award Year / Program / Phase: 1992 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Christopher M. Walker
Award Amount: $50,000.00

High Temperature Optoelectronics

Award Year / Program / Phase: 1993 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Christopher M. Walker
Award Amount: $300,000.00
Abstract:
There are no commercial amplifiers that can operate at temperatures above 125 degrees Celsius. We will combine two comparable wide bandgap semiconducting materials to make electronic amplifiers and switches that operate at high temperatures (at least 500 degrees Celsius). These devices can be… More

Wide Bandgap Semiconductors for High-Temperature Electronics

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Chang Qiu
Award Amount: $63,051.00
Abstract:
THIS PROJECT PROPOSES TO EXPLORE THE USE OF A WIDE BANDGAP SEMICONDUCTOR TO MAKE DEVICES CAPABLE OF OPERATING AT TEMPERATURES OF AT LEAST 500 0C. PN JUNCTIONS WILL BW FABRICATED. THE MAJOR THRUST WILL BE THE STUDY OF ELECTRODE TECHNOLOGY TO MAKE OHMIC CONTACTS THAT ARE STABLE AT HIGH TEMPERATURE AND… More

ECR-Ion Beam Deposition for III-Nitride Semiconductors

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Moeljanto Leksono, Phd
Award Amount: $50,000.00
Abstract:
WE PROPOSE TO DEVELOP AND STUDY A NEW MANUFACTURING TECHNOLOGY FOR THE EPITAXIAL GROWTH OF MULTILAYERS OF III-NITRIDES SEMICONDUCTORS (GaN AND AlGaN) AT TEMPERATURES SUBSTANTIALLY LOWER THAN PRESENTLY ACHIEVED. THE TECHNIQUE IS BASED ON THE ION BEAM DEPOSITION SYSTEM WHERE THE IONS ARE GENERATED BY… More

Rare Earth Doped III-V Semiconductor for Optoelectronics

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Chang Qiu
Award Amount: $65,000.00
Abstract:
THE PROPOSED RESEARCH AND DEVELOPMENT EFFORT WILL EXPLORE THE ELECTROLUMINESCENCE PROPERTIES OF RARE EARTH ELEMENTS IN A III-V SEMICONDUCTOR. THE TECHNIQUE OF IMPACT EXCITATION, CURRENTLY USED IN COMMERCIALLY AVAILABLE ELECTROLUMINESCENCE DISPLAY DEVICES, WILL BE STUDIED FOR EXCITING THE RARE… More

Biotechnology Applied Nanostructures

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Chang H. Qi
Award Amount: $55,311.00

Biotechnology Applied Nanostructures

Award Year / Program / Phase: 1994 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Chang H. Qi
Award Amount: $290,000.00
Abstract:
WE PROPOSE TO APPLY A BIOTECHNOLOGY-BASED PROCESS TO MAKE NANOSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS. THE RESULT WILL BE A UNIFORM ARRAY OF SILICON QUANTUM BOXES OF IDENTICAL DIMENSIONS IN A SILICON LAYER OF CONTROLLED THICKNESS. ALL THREE TECHNIQUES, CONTROLLED THICKNESS OF A CRYSTALLINE Si… More

GROWTH OF GAN SINGLE-CRYSTAL BOULES

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Ting Lei
Award Amount: $58,184.00
Abstract:
The proposed project will produce single-crystal boules of GaN that can be sliced and sold as high-quality substrates for the epitaxial growth of differently-doped GaN or of other lattice-matching crystals, or as wafers for use in optoelectronic and acoustooptic applications. The feasibility of GaN… More

SOLAR-BLIND GAN/ALN UV AND VUV SENSOR

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Robert A. Rice
Award Amount: $59,995.00
Abstract:
Astralux, Inc. will develolp a seminconductor sensor sensitive to bacuum ultraviolet photons. For this, we shall synthesize a wide bandgap semiconductor capable of forming a built-in electric field that will separate the photogenerated electron-hole pairs and produce a photovoltage in response to… More

DIAMOND-BASED THERMAL SENSORY ELEMENT

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Chang H. Qiu
Award Amount: $58,156.00
Abstract:
There is a market for a room temperature infrared detector as well as for a detection system which is radiation resistant and works at high temperatures and in reactive environments. Current infrared imaging technologies are too expensive and too bulky for these applications. We are proposing to… More

Rare Earth Doped III-V Semiconductor for Optoelectronics

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Chang H Qiu
Award Amount: $65,000.00
Abstract:
The proposed research and development effort will explore the electroluminescene properties of rare earth elements in a III-V semiconductor. The technique of impact excitation, currently used in commercially available electroluminescent display devices, will be studied for exciting the rare earths.… More

Short Wavelength Injection Lasers

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency: NSF
Principal Investigator: Lei Ting , Principal Investigator
Award Amount: $65,000.00

Protein Crystals as Patterning Elements for Nanostructured Optoelectronic Materials

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Jacques Pankove
Award Amount: $70,000.00
Abstract:
We propose to develop a new technology for the parallel nanostructuring of optoelectronic materials. It calls for the molecular self-assembly of protein masks on a surface which has been primed with SAMs (self-assembled monolayers) which themselves have been modified, in a parallel process, by deep… More

High Temperature Package for SiC-based Transistors

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Dr. Christopher M. Walker
Award Amount: $100,000.00
Abstract:
Astralux is developing heterobipolar transistors (HBT) using a SiC base. This device operates above 500 C with a current gain in excess of 100. Most of the effort went into design, technology, and characterization of these devices. To make the HBT into a commercial product, the technology of… More

High-Power High-Frequency Transistor

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Moeljanto Leksono
Award Amount: $70,000.00
Abstract:
Astralux, having recently made the first transistor structure to operate above 500 C with a current gain exceeding 100, proposes to explore the limitations of the transistor's power handling capability. At room temperature, this transistor carries a current density one order of magnitude higher… More

A High Power High Frequency Transistor

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency: DOE
Principal Investigator: Jacques I. Pankove
Award Amount: $75,000.00

High-Power, High-Temperature and High-Speed SIC Heterojunction Bipolar Transistors

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency / Branch: DOD / OSD
Principal Investigator: John Torvik
Award Amount: $70,000.00
Abstract:
Not Available This effort shall develop a product for high speed, high data throughput Wavelength Division Multiplexing optical networks through an integrated Micro-electro-mechanical System - Epitaxial Liftoff (MEMS-ELO) manufacturing approach. We shall develop a low cost wavelength-tunable… More

Improved SiO2/SiC Interface for High-Power MOS-Controlled SiC Devices

Award Year / Program / Phase: 1999 / STTR / Phase I
Agency / Branch: DOD / MDA
Research Institution: University of Colorado
Principal Investigator: Mr John T Torvik
Award Amount: $65,000.00
RI Contact: N/A

High-Power, High-Temperature and High-Speed SIC Heterojunction Bipolar Transistors

Award Year / Program / Phase: 2000 / SBIR / Phase II
Agency / Branch: DOD / OSD
Principal Investigator: John Torvik
Award Amount: $350,000.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: J. I. Pankove, V.P. for Research and Tec
Award Amount: $99,000.00

N/A

Award Year / Program / Phase: 2000 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: John T. Torvik, Staff Scientist
Award Amount: $65,000.00

N/A

Award Year / Program / Phase: 2000 / STTR / Phase I
Agency / Branch: DOD / NAVY
Research Institution: KANSAS STATE UNIV.
Principal Investigator: John T. Torvik, President and CEO
Award Amount: $70,000.00
RI Contact: Paul R. Lowe

Silicon Carbide Power Transistors for High Power Transmitter

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: John Torvik, Staff Scientist
Award Amount: $100,000.00
Abstract:
Astralux, in collaboration with the University of Colorado, proposes to develop high-power SiC microwave bipolar transistors for use in pulsed RF transmitters. More specifically, the performance goal is a 4H-SiC bipolar junction transistor (BJT) withpulsed power up to 650 W, single stage power gain… More

Growth of a Boule of GaN

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Jacques Pankove, V.P. for Research and Tec
Award Amount: $64,999.00
Abstract:
A recent workshop on wide bandgap semiconductors concluded there is still an urgent need for a GaN single crystal boule. Such a boule would allow the fabrication of single crystal wafers of high quality GaN for the epitaxial growth of high qualitydevices and integrated circuits for numerous … More

Hybrid semi-insulating SIC wafers

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: John T. Torvik, Senior Scientist
Award Amount: $99,999.00
Abstract:
"Researchers at Astralux, Inc. propose to develop hybrid semi-insulating SiC wafers using a novel technique. Specifically, our overall goal is to commercialize epi-ready 3-inch and 4-inch 4H and 6H SiC wafers for the emerging wide bandgap microwave devicemarket. The hybrid SiC wafers are deemed… More

SBIR Phase I: Efficient Si-based Light Emitting Diodes and Lasers via Wafer-bonded Quantum Dot Arrays

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency: NSF
Principal Investigator: Randolph Treece
Award Amount: $100,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project will provide an inexpensive, highly-scaleable process technology to create high-brightness, short wavelength, silicon-based LEDs (light emitting diodes) and laser diodes. We will utilize a biological template technology, developed at the… More

PHOTO-ASSISTED EPITAXY OF WURTZITE GAN

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Randolph E. Treece, Vice President, Corporate
Award Amount: $70,000.00
Abstract:
"This work proposes to develop innovative methods to use photo-assisted epitaxial growth for GaN in order to reduce the defects that limit device performance. Light can interact with the surface of the substrate and nucleation layer to influence the growthtoward greater perfection. Several… More

Large-area and low-cost hybrid SIC wafers

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: John Torvik, Senior Scientist
Award Amount: $0.00
Abstract:
"Researchers at Astralux, Inc. in collaboration with Sterling Semiconductor, EMCORE Corp. and the University of Colorado at Boulder propose to develop hybrid SiC wafers using a novel technique. Specifically, our goal is to commercialize epi-ready 3-inchand 4-inch 4H and 6H SiC wafers for the… More

Large-area and low-cost hybrid SIC wafers

Award Year / Program / Phase: 2002 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: John Torvik, Senior Scientist
Award Amount: $65,000.00
Abstract:
"Researchers at Astralux, Inc. in collaboration with Sterling Semiconductor, EMCORE Corp. and the University of Colorado at Boulder propose to develop hybrid SiC wafers using a novel technique. Specifically, our goal is to commercialize epi-ready 3-inchand 4-inch 4H and 6H SiC wafers for the… More

High power SiC transistors for superior X-band radar

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: John Torvik, Staff Scientist
Award Amount: $69,987.00
Abstract:
"Astralux, Inc. proposes to develop a new high-power SiC bipolar junction transistor (BJT) operating at ten times higher power density and five times higher efficiency compared to conventional power transistors. This new technology will enable truebroadband (3-10GHz) ultra-linear power amplifiers… More

Integrated Device Cooling Based on Hot Electron Emission

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Randolph Treece, Vice President
Award Amount: $0.00
Abstract:
"Astralux is developing a new approach to the active cooling of electronics that is intrinsically very efficient, low-volume and low cost. The electronic cooler is based on the Nottingham effect. In the Nottingham effect, cooling results from theextraction of "hot electrons", somewhat analogous to… More

Integrated Device Cooling Based on Hot Electron Emission

Award Year / Program / Phase: 2002 / SBIR / Phase II
Agency / Branch: DOD / DARPA
Principal Investigator: Randolph Treece, Vice President
Award Amount: $374,999.00
Abstract:
"Astralux is developing a new approach to the active cooling of electronics that is intrinsically very efficient, low-volume and low cost. The electronic cooler is based on the Nottingham effect. In the Nottingham effect, cooling results from theextraction of "hot electrons", somewhat analogous to… More

Combinatorial Approach to Improved P-Type Contacts via Optimal Molecular Doping

Award Year / Program / Phase: 2002 / STTR / Phase I
Agency / Branch: DOD / MDA
Research Institution: University of Colorado
Principal Investigator: Randolph E. Treece, Vice President
Award Amount: $66,609.00
RI Contact: Bart Van Zeghbroeck
Abstract:
"Astralux, Inc. proposes to develop a novel and enabling p-type doping technology for the III-V nitrides with significant applications in the electronic and optoelectronic device arenas. Specifically, we will use molecular doping of magnesium (Mg) andoxygen (O) by ion implantation to improve upon… More

Improved Microminiature Thermionic Converter Using Low Work Function AlGaN Electrodes

Award Year / Program / Phase: 2002 / SBIR / Phase I
Agency / Branch: DOD / OSD
Principal Investigator: Randolph E. Treece, Vice President
Award Amount: $100,000.00
Abstract:
"There is a general need to generate high energy density electrical power sources for space, aircraft, ground and naval vehicles, as well as to convert the heat already present in high temperature sources into electrical power. Thermionic power generationis a very attractive solution to both needs.… More

Large-area and low-cost hybrid SIC wafers

Award Year / Program / Phase: 2003 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: Torvik, Staff Scientist
Award Amount: $496,370.00
Abstract:
Researchers at Astralux, Inc. in collaboration with Sterling Semiconductor, EMCORE Corp. and the University of Colorado at Boulder propose to develop hybrid SiC wafers using a novel technique. Specifically, our goal is to commercialize epi-ready 3-inchand 4-inch 4H and 6H SiC wafers for the… More

SiC Power Transistors for High Power Transmitter

Award Year / Program / Phase: 2003 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: John T. Torvik
Award Amount: $749,809.00

Device-Quality, Low-Defect Hybrid SiC Wafers

Award Year / Program / Phase: 2003 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Randolph E. Treece, Vice President
Award Amount: $749,972.00
Abstract:
Researchers at Astralux, Inc. in collaboration with PowerSicel, Inc and the University of Colorado at Boulder propose to develop hybrid SiC wafers using a novel technique. Specifically, our goal is to commercialize low-defect, epi-ready 3-inch and 4-inchSiC wafers. We will develop conducting… More

Portable E-beam Pumped UV/X-ray Bio-Decontamination System

Award Year / Program / Phase: 2004 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Randolph E. Treece, Vice Pres. and General Manager
Award Amount: $100,000.00
Abstract:
The malicious distribution of Bacillus anthracis spores through the U.S. Postal Service in the fall of 2001 demonstrated the vulnerability of the United States to biological threats. These events showed the need for improved decontamination methods for buildings and assets exposed to various… More

Portable E-beam Pumped UV/X-ray Bio-decontamination System

Award Year / Program / Phase: 2005 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Randolph E. Treece, President / CEO
Award Amount: $750,000.00
Abstract:
Biological warfare agents pose a grave threat to the United States, as events of the last few years have shown. The malicious delivery of Bacillus anthracis spores to government and private-sector buildings through the U.S. mail system in 2001, was a prime example. The U.S. Armed Forces… More

Thermal Management via Hybrid Wafers and Devices

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency: DOE
Principal Investigator: Randolph E. Treece, Dr.
Award Amount: $100,000.00
Abstract:
79748S Silicon (Si) has been the workhorse of the electronics industry since the invention of the transistor, and engineers have found new ways to push the limits of processing speed and power handling ability of Si chips. Decreasing the gate lengths, increasing the number of processors per unit… More

Thermionic Conversion of Automotive Waste Heat

Award Year / Program / Phase: 2005 / SBIR / Phase I
Agency: DOE
Principal Investigator: Randolph E. Treece, Dr.
Award Amount: $100,000.00
Abstract:
79590B Automobile engines generate significant waste heat, which could be recovered and converted to electricity to meet the growing demand for electric power. Thermionic emission allows waste heat to be converted, but traditional thermionic materials provide very low conversion efficiencies at… More

SBIR Phase I: Improved X-band T/R Modules for High-Temperature/Power Operation

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency: NSF
Principal Investigator: Randolph E. Treece, PhD
Award Amount: $100,000.00
Abstract:
This Small Business Innovation Research Phase I project will develop a hybrid substrate based, Si-on-SiC, for application to X-band circuitry. This innovative approach incorporates the advantages of compound semiconductor devices with the incumbent advantages of Si processing and circuit technology… More

SBIR Phase I: Advanced Manufacturing of Hybrid Wafers and Devices

Award Year / Program / Phase: 2007 / SBIR / Phase I
Agency: NSF
Principal Investigator: Randolph E. Treece, PhD
Award Amount: $100,000.00
Abstract:
This Small Business Innovation Research (SBIR) Phase I project addresses an approach to incorporate the advantages of SiC devices with the incumbent advantages of Si processing and circuit technology to form hybrid circuits which will enable advanced power conversion systems. The multi-kilowatt… More