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GROWTH OF GAN SINGLE-CRYSTAL BOULES

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
25532
Program Year/Program:
1994 / SBIR
Agency Tracking Number:
25532
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ASTRALUX, INC.
2500 CENTRAL AVE. # 286 Boulder, CO 80301 2845
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1994
Title: GROWTH OF GAN SINGLE-CRYSTAL BOULES
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $58,184.00
 

Abstract:

The proposed project will produce single-crystal boules of GaN that can be sliced and sold as high-quality substrates for the epitaxial growth of differently-doped GaN or of other lattice-matching crystals, or as wafers for use in optoelectronic and acoustooptic applications. The feasibility of GaN boules will be tested on a small scale: to produce cm3-sized crystals. The process will be scles up during Phase II, leadin gto commercial production within two years. A similar technique can be used to generate other nitrides in single-crystal form: A1N, InN, TiN, ErN, and possible their alloys.

Principal Investigator:

Ting Lei
3034940670

Business Contact:

Small Business Information at Submission:

Astralux
2386 Vassar Drive Boulder, CO 80303

EIN/Tax ID: 841195333
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No