GROWTH OF GAN SINGLE-CRYSTAL BOULES
Agency / Branch:
DOD / MDA
The proposed project will produce single-crystal boules of GaN that can be sliced and sold as high-quality substrates for the epitaxial growth of differently-doped GaN or of other lattice-matching crystals, or as wafers for use in optoelectronic and acoustooptic applications. The feasibility of GaN boules will be tested on a small scale: to produce cm3-sized crystals. The process will be scles up during Phase II, leadin gto commercial production within two years. A similar technique can be used to generate other nitrides in single-crystal form: A1N, InN, TiN, ErN, and possible their alloys.
Small Business Information at Submission:
Principal Investigator:Ting Lei
2386 Vassar Drive Boulder, CO 80303
Number of Employees: