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Rare Earth Doped III-V Semiconductor for Optoelectronics

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
26237
Program Year/Program:
1994 / SBIR
Agency Tracking Number:
26237
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ASTRALUX, INC.
2500 CENTRAL AVE. # 286 Boulder, CO 80301 2845
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1994
Title: Rare Earth Doped III-V Semiconductor for Optoelectronics
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $65,000.00
 

Abstract:

The proposed research and development effort will explore the electroluminescene properties of rare earth elements in a III-V semiconductor. The technique of impact excitation, currently used in commercially available electroluminescent display devices, will be studied for exciting the rare earths. We have already demonstrated the possibility of generating visible light by hot electron impact excitation in a III-V seminconductor. We propose to introduce erbium (Er) atoms into a III-V semiconductor as a luminescent source for 1.55 um light emission. Previously fabricated on-hand devices will be doped with Er atoms by ion beam implantation techniques. This will permit rapid evaluation of the efficiency of electrically exciting Er luminescence. We will also grow new structures by the plasma-assisted chemical vapor deposition method incorporating a metalorganic source of Er. This allows growth of Er-doped semiconductors at low temperatures, thus minimizing thermally-induced stresses. These samples will be characterized by a number of analytic methods and compared to the ion implanted/high-temperature annealed material.

Principal Investigator:

Chang H Qiu
3034948232

Business Contact:

Small Business Information at Submission:

Astralux
2386 Vasser Drive Boulder, CO 80303

EIN/Tax ID: 841195333
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No