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Silicon Carbide Power Transistors for High Power Transmitter

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
52505
Program Year/Program:
2001 / SBIR
Agency Tracking Number:
011SN-2032
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ASTRALUX, INC.
2500 CENTRAL AVE. # 286 Boulder, CO 80301 2845
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2001
Title: Silicon Carbide Power Transistors for High Power Transmitter
Agency / Branch: DOD / USAF
Contract: F33615-01-M-1938
Award Amount: $100,000.00
 

Abstract:

Astralux, in collaboration with the University of Colorado, proposes to develop high-power SiC microwave bipolar transistors for use in pulsed RF transmitters. More specifically, the performance goal is a 4H-SiC bipolar junction transistor (BJT) withpulsed power up to 650 W, single stage power gain up to 12 dB and bandwidth up to 3 GHz. The advantages of bipolar devices over Si-based devices include power gain, superior linearity and stability combined with a higher power dissipation capability.Compared to other SiC devices, the BJT provides better power added efficiency, higher power gain and superior linearity while operating on a single supply voltage, leading to more compact and cost efficient systems.SiC BJTs are identified as potentialhigh-power microwave devices and would greatly benefit the development of high-power transmitters and wireless communication.

Principal Investigator:

John Torvik
Staff Scientist
3034131440
jtorvik@astraluxinc.com

Business Contact:

Jacques Pankove
Vice President
3034131440
pankove@astraluxinc.com
Small Business Information at Submission:

ASTRALUX, INC.
2500 Central Ave. Boulder, CO 80301

EIN/Tax ID: 841195333
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No