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High power SiC transistors for superior X-band radar
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2002Title: High power SiC transistors for superior X-band radarAgency / Branch: DOD / MDAContract: HQ0006-03-C-0037Award Amount: $69,987.00
Abstract:
"Astralux, Inc. proposes to develop a new high-power SiC bipolar junction transistor (BJT) operating at ten times higher power density and five times higher efficiency compared to conventional power transistors. This new technology will enable truebroadband (3-10GHz) ultra-linear power amplifiers and superior T/R modules for use in radar, satellite communication and other wireless systems. The BJTs will not only outperform existing high-power semiconductor components and vacuum tubes, but also besmaller and more robust. Furthermore, these powerful components will reduce overall systems costs by simplifying the amplifier architecture and facilitating waste heat rejection.The SiC BJT combines high power, high power density, high efficiency, low noise and high linearity, which will result in more powerful, compact, and less costly X-band BMD class radar systems with enhanced resolution and improved discrimination. Theultimate benefit is enhanced national security through early warning, target identification and tracking of hostile targets. SiC BJTs are identified as potential high-power RF devices and would greatly benefit the development of high-power amplifiers and T/R modules."Small Business Information at Submission:Astralux, Inc.
2500 Central Ave. Boulder, CO 80301EIN/Tax ID: 841195333DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Missile Defense Agency |
Award ID: 59148 |
Program Year/Program: 2002 / SBIR |
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Agency Tracking Number: 022-0835 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |