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Company Information:

Company Name:
ASTROPOWER, INC.
Address:
Solar Park
Newark, DE 19716
Phone:
(302) 366-0400
URL:
N/A
EIN:
N/A
DUNS:
608061883
Number of Employees:
30
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $3,286,338.00 54
SBIR Phase II $11,241,618.00 25
STTR Phase I $69,955.00 1

Award List:

GAASP TOP SOLAR CELLS FOR INCREASED SOLAR CONVERSION EFFICIENCY

Award Year / Program / Phase:
1984 / SBIR / Phase I
Award Amount:
$49,999.00
Agency / Branch:
DOD / USAF
Principal Investigator:
James B. Mcneely
Abstract:
N/a

GAASP TOP SOLAR CELLS FOR INCREASED SOLAR CONVERSION EFFICIENCY

Award Year / Program / Phase:
1985 / SBIR / Phase II
Award Amount:
$423,600.00
Agency / Branch:
DOD / USAF
Principal Investigator:
James B. Mcneely
Abstract:
Gaasp solar cells placed on top of conventional silicon solar cell arrays can increase the energy conversion efficiency of the system as much as 100%. astropower division of astrosystems, inc. proposes to develop a high band gap top solar cell for attachment to conventionals ilicon solar cells.… More

OPTICAL COMMUNICATIONS.

Award Year / Program / Phase:
1985 / SBIR / Phase I
Award Amount:
$40,000.00
Agency:
NSF
Principal Investigator:
James b mcneely , DIR MATERIALS DEV
Abstract:
The growth of gaas on silicon has long been recognized as a desirable approach for advance optoelectronic devices including optical integrated circuits, optical communicationbetween circuits and as a source of low-cost gaas layers forsolar cell and display applications. progress on the development… More

HIGH-EFFICIENCY THIN-FILM SILICON-ON-GAP SOLAR CELL FOR IMPROVED RADIATION RESISTANCE

Award Year / Program / Phase:
1986 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
J S Culik
Abstract:
N/a

MONOLITHIC GAAS LIGHT-EMITTING DIODES ON SILICON VLSI CIRCUITS ELEMENTS

Award Year / Program / Phase:
1986 / SBIR / Phase I
Award Amount:
$49,999.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
James B Mcneely
Abstract:
N/a

MONOLITHIC GAAS LIGHT-EMITTING DIODES ON SILICON VLSI CIRCUITS ELEMENTS

Award Year / Program / Phase:
1987 / SBIR / Phase II
Award Amount:
$222,417.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
James B Mcneely
Abstract:
Optoelectronic sources, integrated as monolithic elements on silicon vlsi chips, offer important advantages in the transmission of information within the chip or between chips in advanced computer systems. the speed of optical-integrated vlsi devices is expected to be considerably higher than… More

HIGH-EFFICIENCY THIN-FILM SILICON-ON-GAP SOLAR CELL FOR IMPROVED RADIATION RESISTANCE

Award Year / Program / Phase:
1987 / SBIR / Phase II
Award Amount:
$75,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
J S Culik
Abstract:
The ultimate high-efficiency crystalline silicon solar cell design consists of a thin film of electrically-active silicon epitaxially grown on an oxide-overcoated, infrared-transparent gallium phosphide (gap) substrate. in addition to high conversion efficiency and intrinsic radiation resistance due… More

INTEGRATED GAAS EMITTER FOR OPTICAL INTERCONNECTIONS

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$40,000.00
Agency:
NSF
Principal Investigator:
Abstract:
The effect of scaling down device dimensions of vlsi structures and the combination of increased circuit complexity during the scaling process is placing severe limitations on the minimum propagation delay of metallic interconnects. optical interconnects remove those speed limitations and offer a… More

ELECTRONIC GAAS-ON-SILICON MATERIAL FOR ADVANCED HIGH-SPEED OPTOELECTRONIC DEVICES

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James B Mcneely
Abstract:
N/a

ELECTRONIC GAAS-ON-SILICON MATERIAL FOR ADVANCED HIGH-SPEED OPTOELECTRONIC DEVICES

Award Year / Program / Phase:
1988 / SBIR / Phase II
Award Amount:
$475,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James B Mcneely
Abstract:
The successful growth of gaas on silicon substrates using double selective liquid epitaxial (dsle) process has recently been accomplished. these results set the stage for the development of an extremely useful material--large planar wafers of smooth gaas on silicon. double selective liquid phase… More

HIGH TEMPERATURE SURVIVABLE CONTACTS FOR GALLIUM ARSENIDE SPACE SOLAR CELLS

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James B Mcneely
Abstract:
N/a

ALUMINUM-GALLIUM-ARSENIDE TOP SOLAR CELL FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRATOR WITH IMPROVED AMO EFFICIENCY

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Gerald H Negley
Abstract:
N/a

GALLIUM ARSENIDE ON SILICON FOR MICROELECTRONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$50,000.00
Agency:
NSF
Principal Investigator:
James B Mcneely
Abstract:
N/a

GALLIUM ARSENIDE ON SILICON FOR MICROELECTRONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS

Award Year / Program / Phase:
1989 / SBIR / Phase II
Award Amount:
$224,440.00
Agency:
NSF
Principal Investigator:
James B Mcneely
Abstract:
The growth of device quality, large area gaas epitaxial layers on silicon substrates is recognized as an important technological development. the quality of heteroepitaxial layers of gaas on silicon are limited by gaas-si lattice mismatch and thermal coefficient mismatch. the defect density of the… More

THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES

Award Year / Program / Phase:
1989 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James B Mcneely
Abstract:
N/a

HIGH TEMPERATURE SURVIVABLE INDIUM PHOSPHIDE SOLAR CELLS

Award Year / Program / Phase:
1989 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James B Mcneely
Abstract:
N/a

ALUMINUM-GALLIUM-ARSENIDE TOP SOLAR CELL FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRATOR WITH IMPROVED AMO EFFICIENCY

Award Year / Program / Phase:
1990 / SBIR / Phase II
Award Amount:
$300,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Gerald H Negley
Abstract:
Increases in solar cell efficiency can be achieved with tandem multi-junction structures to improve the performance and scale of space photovoltaic concentrators. the "top solar cell" tandem approach could increase energy conversion efficiency by as much as 100%. a self-supporting… More

HIGH TEMPERATURE SURVIVABLE CONTACTS FOR GALLIUM ARSENIDE SPACE SOLAR CELLS

Award Year / Program / Phase:
1990 / SBIR / Phase II
Award Amount:
$299,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James B Mcneely
Abstract:
Existing metallic-type contacts on gallium arsenide (gaas) have not been stable at high temperatures because of interdiffusion and/or alloying of the gaas top layer. high temperature contacts to gaas space photoltaic cells are being developed based on the formation of a highly-stable intermediate… More

THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES

Award Year / Program / Phase:
1990 / SBIR / Phase II
Award Amount:
$487,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James B Mcneely
Abstract:
Uniform large area, device quality indium phosphide (inp) epitaxial layers on insulating substrates could lead to the development of a new generation of producible, radiation-hardened microelectronic and optoelectroniv integrated circuits. inp alloys offer the advantages of: proven resistance to… More

HIGH TEMPERATURE SURVIVABLE INDIUM PHOSPHIDE SOLAR CELLS

Award Year / Program / Phase:
1990 / SBIR / Phase II
Award Amount:
$478,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James B Mcneely
Abstract:
High temperature (>600 degrees celsius) indium phosphide (inp) space solar cells are being developed to eliminate theproblems, surface decomposition and contact failure, encountered when inp solar cells are exposed to high temperatures. key to this program are the use of an encapsulant layer to… More

"ELECTRO-DEPOSITION OF SILICON FILMS FROM LIQUID-METAL SOLUTIONS FOR PHOTOVOLTAIC APPLICATIONS"

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$50,000.00
Agency:
DOE
Principal Investigator:
Abstract:
Electro-deposition of silicon films from liquid-metal solutions will be investigated. the objective is to develop a low-cost process for the production of high-efficiency thin-film photovoltaic devices. specifically, current-controlled growth of a silicon film on a substrate is accomplished using a… More

HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Michael G Mauk
Abstract:
N/a

HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Jerome S Culik
Abstract:
N/a

LARGE-SCALE LIGUID PHASE EPITAXY OF MULTIPLE LAYER III-V SEMICONDUCTOR COMPOUNDS

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$50,000.00
Agency:
NSF
Principal Investigator:
Gerald H. Negley , Manager
Abstract:
Astropower proposes to develop a large-scale, high-throughput liquid phase epitaxial (lpe) reactor for thefabrication of multi-layer iii-v semiconductor devices. a design goal of 1000 cm(2) per hour has been established while maintaining the key features of lpe: 1) highest material quality of all… More

CONFORMAL HETEROEPITAXY OF GAAS AND INP ON SILICON AND SAPPHIRE SUBSTRATES

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$50,000.00
Agency:
NSF
Principal Investigator:
Michael G. Mauk , Research Engineer
Abstract:
Conformal vapor phase epitaxy (cvpe) is a new technique for two-dimensional constrained growth of thin semiconductor films using a halide vapor transport process. this technique will be applied to the growth of gaas and inp films on silicon and sapphire substrates. epitaxial-lateralovergrowth with… More

HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS

Award Year / Program / Phase:
1991 / SBIR / Phase II
Award Amount:
$500,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Jerome S Culik
Abstract:
N/a

HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS

Award Year / Program / Phase:
1991 / SBIR / Phase II
Award Amount:
$496,519.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Michael G Mauk
Abstract:
N/a

THIN CRYSTALLINE SILICON FILM PHOTOVOLTAIC SOLAR CELLS AND ARRAYS ON FLEXIBLE SUBSTRATES

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James A Rand , Principal Investigator
Abstract:
N/a

THIN CRYSTALLINE SILICON FILM PHOTOVOLTAIC SOLAR CELLS AND ARRAYS ON FLEXIBLE SUBSTRATES

Award Year / Program / Phase:
1992 / SBIR / Phase II
Award Amount:
$497,072.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James A Rand , Principal Investigator
Abstract:
Solar cells are being fabricated using thin films of silicon on inexpensive, flexible cloth substrates. photovoltaic devices fabricated with these structures can demonstrate the high performance of crystalline silicon with the light weight of thin film solar cells. the result is a solar cell that… More

AlGaP/GaP Heterostructure Ultraviolet Detector

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Paul E. Sims
Abstract:
AstroPower is developing a highly sensitive UV detector based on epitaxial AlGaP/GaP heterostructures, a promising new material system for ultraviolet detectors. Detecting ultraviolet light is important to spectrophotometry, astronomy, high-energy physics, medicine, UV curing, photoresist exposure,… More

Large Area Thin Film Silicon Carbide Using Zone Melt Synthesis and LPE

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Sandra Collins
Abstract:
AstroPower is developing a new process for the growth of large area, thin film 3C-SiC using a proprietary deposition technique followed by liquid phase epitaxy (LPE). Successful development of the growth process will provide high quality, thin film SiC in typical silicon wafer areas, allowing… More

AlGaInP/GaAs 27% Efficient Top Solar Cells

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Louis C. Dinetta
Abstract:
AstroPower will develop a two-junction monolithic tandem solar cell composed of (AlxGa1-x)0.51 In(0.49)P, which is lattice matched to GaAs, as the top cell in a three-junction, two-terminal tandem solar cell. This new tunable bandgap Al-Ga-In-P material is capable of current matching in a… More

Laser and LED Arrays for Optical Computing

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Michael G. Mauk
Abstract:
1 New concepts in optical computing and optical interconnects require hardware developments of generic, compact, multi-element LED source array. A two dementional array of individually-addressable Light-emitting Diode optical emitters will be developed. An innovative CVD/LPE heteropitaxy technique… More

LIGHTWEIGHT, LIGHT-TRAPPED, THIN GAAS SOLAR CELL FOR SPACECRAFT APPLICATIONS

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$49,713.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Margaret H. Hannon
Abstract:
N/a

HIGHLY PORTABLE, FLEXIBLE SILICON SOLAR CELL ARRAYS FOR POLAR OPERATIONS

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$50,000.00
Agency:
NSF
Principal Investigator:
Michael G. Mauk
Abstract:
N/a

A LOW-LEAKAGE GALLIUM PHOSPHIDE PARTICLE DETECTOR

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$50,000.00
Agency:
NSF
Principal Investigator:
Sandra R. Collins , Principal Investigator
Abstract:
N/a

GaP ZnS for Blue Light Emitting Diodes

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Robert B. Hall
Abstract:
N/a

HIGHLY PORTABLE, FLEXIBLE SILICON SOLAR CELL ARRAYS FOR POLAR OPERATIONS

Award Year / Program / Phase:
1993 / SBIR / Phase II
Award Amount:
$268,349.00
Agency:
NSF
Principal Investigator:
Michael G. Mauk
Abstract:
This program will demonstrate high specific power, lightweight, flexible, thin silicon solar cells. these solar cells can be directly substituted for existing state of the art silicon solar cells with the effect of significantly improving specific power, power/area, and power supply life. the… More

GaP ZnS for Blue Light Emitting Diodes

Award Year / Program / Phase:
1993 / SBIR / Phase II
Award Amount:
$345,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Robert B. Hall
Abstract:
AstroPower is developing a two-junction monolithic tandem solar cell composed of (AlxGa1-x)0.51In.49P lattice matched to GaAs for use as the top cell in a three-junction, two-terminal tandem stack. This tunable bandgap material system is capable of current matching, at 2.03eV, in a two-junction… More

LIGHTWEIGHT, LIGHT-TRAPPED, THIN GAAS SOLAR CELL FOR SPACECRAFT APPLICATIONS

Award Year / Program / Phase:
1993 / SBIR / Phase II
Award Amount:
$582,073.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Margaret H. Hannon
Abstract:
Astropower is proposing the development of an ultra-lightweight, high performance, thin light trapping gaas solar cell for advanced space power systems. a thin device leads to higher performance in terms of open circuit voltage, radiation resistance, and specific power. in a thin device, the… More

High Specific Power, Electrostatically Bonded, Ultra-thin Gaas

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$65,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Margaret H. Hannon
Abstract:
ASTROPOWER PROPOSES TO DEVELOP A LIGHTWEIGHT, HIGH PERFORMANCE, ULTRA-THIN ELECTROSTATICALLY BONDED GaAs SOLAR CELL WITH COPLANAR BACK CONTACTS. THE INNOVATIVE DESIGN INCORPORATES LIGHT TRAPPING, ADHESIVELESS COVER SLIDE BONDING, AND ELIMINATES GRID SHADING. THIS NOVEL DEVICE WILL EXHIBIT INCREASED… More

(GAP)1-X(ZNS)X:A NEW TUNABLE WIDE-BANDGAP MATERIAL FOR BLUE LIGHT EMITTING DIODES AND DETECTORS OF ULTRAVIOLET RADIATION

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$50,000.00
Agency:
NSF
Principal Investigator:
Margaret H Hannon
Abstract:
The growth and development of a (gap)1-x(zns)x-based material is being engineered to prepare an uteropolar, direct bandgap material. this type of material with bandgap in excess of 2.6 ev can be employed in blue light-emitting diodes, and in uv detectors capable of superior performance compared to… More

HIGH VOLTAGE GALLIUM PHOSPHIDE POWER CONVERTERS FR BETAVOLTAIC BATTERIES

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$50,000.00
Agency:
NSF
Principal Investigator:
Paul E Sims
Abstract:
Astropower is developing gallium phosphide energy converters optimized for radio luminescent light-based power supplies. a "two-step" or "indirect" process is used where a phosphor is excited by radioactive decay products to produce light that is then converted to electricity by a gap energy… More

Monolithically Interconnected, Thin Silicon Solar Cell Array

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$65,761.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Jeffrey E. Cotter
Abstract:
N/a

Monolithically Interconnected, Thin Silicon Solar Cell Array

Award Year / Program / Phase:
1994 / SBIR / Phase II
Award Amount:
$648,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Jeffrey E. Cotter
Abstract:
Astropower proposes to develop a lightweight, high efficiency, monolithically interconnected thin silicon solar cell array. the array incorporates an innovative technique to achieve electrical isolation and interconnection of the array elements. a monolithically interconnected array technology… More

High Quantum Efficiency, Low-noise, Radiation-tolerant AlGaP CCD-UV

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$74,994.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Louis Dinetta
Abstract:
ASTROPOWER PROPOSES TO DEVELOP A NEW FRONT-ILLUMINATED, ALUMINUM GALLIUM PHOSPHIDE (AlGaP) BASED, CHARGE-COUPLED DEVICE (CCD), ULTRAVIOLET (UV) IMAGING ARRAY. THIS NOVEL ARRAY TECHNOLOGY HAS NEVER BEEN SUCCESSFULLY DEVELOPED. THREE NEW INNOVATIONS WILL BE NECESSARY TO ACOMPLISH THE AlGaP CCD. THESE… More

HIGH SPEED SHEET GROWTH OF THIN SILICON

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$75,000.00
Agency:
DOE
Principal Investigator:
Jeffry E Cotter
Abstract:
A novel silicon deposition process capable of depositing high quality thin-film silicon layers on low cost supporting substrates will be investigated in phase i. the substrate will include a reflector for light trapping. the planned deposition process will allow the formation of silicon layers 20… More

MONOLITHICALLY INTEGRATED BICOLOR EDGE EMITTER-DETECTOR PAIRS FOR WAVELENGTH-DIVISION MULTIPLEXING

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$65,000.00
Agency:
NSF
Principal Investigator:
Margaret H Hannon
Abstract:
Investigators are developing monolithically integrated bicolor edge emitter-detector pairs for wavelength-division multiplexing in fiber optic communications. this device utilizes laterally graded a1xga1-xas layers formed by liquid phase epitaxial deposition onto a continuously moving substrate. … More

LOS COST, HIGH PURITY SILICON BY ALKALINE GLYCOLIC DIGESTION OF SILICA

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$75,000.00
Agency:
DOE
Principal Investigator:
James B Mcneely
Abstract:
The solar cell application of crystalline silicon thin-film, photocoltaic (pv) technologies is currently limited by the high cost of the silicon raw material. this is a result of the carbothermal reduction metallurgical process used to create the semiconductor-grade silicon from silica. there is a… More

InAsSb/GaSb Infrared Light-Emitting Diodes (LED's)

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
James B. Mcneely
Abstract:
AstroPower proposes to develop intense, mass-producible, low-cost 4 to 5 micron light-emitting diodes (LED's) using liquid-phase heteroepitaxy of lattice-matched InAsSb on GaSb substrates. The brightest visible LEDs (Ultrabrights) currently available are being produced commercially by the liquid… More

Embedded UV Combustion Sensor

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$93,982.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Paul Sims
Abstract:
N/a

LOW-DEFECT SIC MATERIAL BY LIQUID-PHASE EPITAXIAL LATERAL OVERGROWTH

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Michael Mauk
Abstract:
N/a

ALL BACK CONTACT ULTRA-THIN GaAs SOLAR CELL WITH ZERO GRID OBSCURATION

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$75,957.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Margaret Hannon
Abstract:
N/a

A LOW-LEAKAGE GALLIUM PHOSPHIDE PARTICLE DETECTOR

Award Year / Program / Phase:
1995 / SBIR / Phase II
Award Amount:
$249,986.00
Agency:
NSF
Principal Investigator:
Sandra R. Collins , Principal Investigator
Abstract:
Epitaxial gallium phosphide (gap) will be studied as a promising new material for the manufacture of particle detectors. due to a high indirect bandgap and exceptional crystalline quality, epitaxial gallium phosphide detectors will provide superior performance in high-temperature, high-radiation… More

ALL BACK CONTACT ULTRA-THIN GaAs SOLAR CELL WITH ZERO GRID OBSCURATION

Award Year / Program / Phase:
1995 / SBIR / Phase II
Award Amount:
$592,035.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Margaret Hannon
Abstract:
AstroPower proposes to develop a lightweight, high performance, ultra-thin electrostatically bonded GaAs solar cell with an all back contact, zero-grid obscuration structure. The unique design incorporates light trapping, adhesiveless cover slide bonding, and eliminates grid shading. This innovation… More

High-Performance, Resonant Optical Cavity Light-Emitting Diodes

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Michael G. Mauk
Abstract:
The Phase I Project will develop a comprehensive model to evaluate and optimize state-of-the-art light-emitting diodes for optical memories, optical computing, and fiber or free-space photonic interconnects. The innovation is the development of resonant optical cavity LEDs and a proprietary low-cost… More

Embedded UV Combustion Sensor

Award Year / Program / Phase:
1995 / SBIR / Phase II
Award Amount:
$464,549.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Paul Sims
Abstract:
AstroPower proposes to develop gallium phosphide (GaP) ultraviolet (UV) sensors for engine combustion control. The UV spectra from the free radial combustion components correlates with combustion effectivity in terms of predetonation, and provides a real time basis for central control of excess air… More

A New Approach to Large Area Silicon Carbide

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$65,000.00
Agency:
NSF
Principal Investigator:
Zane Shellenbarger
Abstract:
N/a

High Efficiency Floating Junction Gallium Arsenide Solar Cell

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Michael W. Dashiell
Abstract:
N/a

GaInAsSb Infrared Laser Diodes

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Michael G. Mauk
Abstract:
N/a

Thin-Silicon Solar Cells Optimized For Deep-Space Mission Requirements

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$70,000.00
Agency:
NASA
Principal Investigator:
Paul E. Sims , Product Development Manager
Abstract:
N/a

Gallium Phosphide Ultraviolet Diode Arrays

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$75,000.00
Agency:
DOE
Principal Investigator:
Paul E. Sims
Abstract:
N/a

LOW-DEFECT SIC MATERIAL BY LIQUID-PHASE EPITAXIAL LATERAL OVERGROWTH

Award Year / Program / Phase:
1996 / SBIR / Phase II
Award Amount:
$734,497.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Michael Mauk
Abstract:
We propose a new epitaxial growth technology for low-defect SiC substrates based on metallic solution growth of SiC on silicon and SiC wafers. A significant feature of the our approach is the use of epitaxial lateral overgrowth for "defect filtering." In the Phase I proposal, we present arguments… More

GaInAsSb Infrared Laser Diodes

Award Year / Program / Phase:
1996 / SBIR / Phase II
Award Amount:
$675,842.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Michael G. Mauk
Abstract:
There is much need for lasers with emission wavelengths in the mid-infrared (2 to 5 microns) for applications that include molecular spectroscopy, environmental and atmospheric trace gas analysis, long haul fiber communications, laser surgery, and atmospheric free-space laser transmission. The… More

High Voltage GaAs Solar Cell for Linear Concentrator Arrays

Award Year / Program / Phase:
1996 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Margaret H. Hannon
Abstract:
AstroPower proposes to develop a new high voltage solar cell for photovoltaic linear concentrator arrays based on our thin GaAs solar cell and epitaxial lateral overgrowth technologies and applying lateral segment interconnection techniques. This solar cell design has several advantages which make… More

AlGaAsSb/InGaAsSb on GaSb, Infrared, Separate Absorption and Multiplication, Avalanche Photodiodes

Award Year / Program / Phase:
1996 / SBIR / Phase I
Award Amount:
$99,998.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Thomas A. Goodwin
Abstract:
N/a

GAINASSB AND INASSBP INFRARED DETECTORS

Award Year / Program / Phase:
1996 / SBIR / Phase I
Award Amount:
$70,000.00
Agency:
NASA
Principal Investigator:
Zane A. Shellenbarger , Research Engineer
Abstract:
N/a

High Efficiency Floating Junction Gallium Arsenide Solar Cell

Award Year / Program / Phase:
1997 / SBIR / Phase II
Award Amount:
$600,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Michael W. Dashiell
Abstract:
AstroPower proposes to develop a new ultra-thin gallium arsenide solar cell for space applications, that will result in significantly higher performance compared to conventional gallium arsenide and silicon solar cells. This design incorporates a "floating" junction on the front of the ultra-thin… More

AlGaAsSb/InGaAsSb on GaSb, Infrared, Separate Absorption and Multiplication, Avalanche Photodiodes

Award Year / Program / Phase:
1997 / SBIR / Phase II
Award Amount:
$294,896.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Thomas A. Goodwin
Abstract:
AstroPower proposes to develop high performance, room temperature, mass-producible, low-cost infrared detectors using liquid-phase heteroepitaxy of lattice-matched InGaAsSb and AlGaAsSb on GaSb substrates. The structure of these detectors will be a Separate Absorption and Multiplication Avalanche… More

Thallium-Containing III-V Quaternary Compound Semiconductor for Use in Infrared Detection

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$75,000.00
Agency:
DOE
Principal Investigator:
Mr. Zane A. Shellenbarger , Research Engineer
Abstract:
117 Thallium-Containing III-V Quaternary Compound Semiconductor for Use in Infrared Detection--AstroPower, Inc., Solar Park, Newark, DE 19716-2000; (302) 366-0400 Mr. Zane A. Shellenbarger, Principal Investigator Mr. Thomas J. Stiner, Business Official DOE Grant No.… More

Low-Defect GaN Surrogate Substrates by Epitaxial Lateral Overgrowth

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$60,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Michael G. Mauk
Abstract:
We propose exploratory development of new epitaxial growth technologies for low-defect GiN epitaxial structures and surrogate substrates. A significant feature of our approach is epitaxial latval overgrowth for "defect filtering." We present arguments that such epitaxial lateral overgrowth will lead… More

GAINASSB AND INASSBP INFRARED DETECTORS

Award Year / Program / Phase:
1997 / SBIR / Phase II
Award Amount:
$559,094.00
Agency:
NASA
Principal Investigator:
Zane A. Shellenbarger , Research Engineer
Abstract:
N/a

Solid-State Spectroradiometer

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$53,000.00
Agency:
NASA
Principal Investigator:
Zane A. Shellenbarger , PRODUCT DEVELOPMENT ENGINEER
Abstract:
N/a

Thin (<30 micron) Silicon-Film Solar Cells on Glass-Ceramic Substrates

Award Year / Program / Phase:
1998 / SBIR / Phase I
Award Amount:
$75,000.00
Agency:
DOE
Principal Investigator:
Dr. Michael G. Mauk , Research Engineer
Abstract:
50341-98-I Thin (

Solution Growth Adapted for Low-BandgapTernary and Quaternary III-V Alloy Bulk Crystals

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$98,628.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Michael Mauk
Abstract:
N/a

N/A

Award Year / Program / Phase:
1999 / SBIR / Phase II
Award Amount:
$749,249.00
Agency:
DOE
Principal Investigator:
Dr Michael G Mauk , Research Engineer
Abstract:
N/a

Mid-infrared avalanche photodiode arrays

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$69,998.00
Agency:
NASA
Principal Investigator:
Zane A. Shellenbarger, Product Development Manager
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$99,771.00
Agency:
DOE
Principal Investigator:
Michael G. Mauk, Senior Scientist
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$94,538.00
Agency:
NSF
Principal Investigator:
Michael Mauk
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / STTR / Phase I
Award Amount:
$69,955.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Michael G. Mauk, Senior Research Engineer
Research Institution:
JET PROPULSION LABORATORY
RI Contact:
Michael J. Sander
Abstract:
N/a