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ASTROPOWER, INC.
UEI: N/A
# of Employees: 30
HUBZone Owned: No
Socially and Economically Disadvantaged: No
Woman Owned: No
Award Charts
Award Listing
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A LOW-LEAKAGE GALLIUM PHOSPHIDE PARTICLE DETECTOR
Amount: $50,000.00N/A
SBIRPhase I1992National Science Foundation -
GaP ZnS for Blue Light Emitting Diodes
Amount: $50,000.00N/A
SBIRPhase I1992Department of Defense Missile Defense Agency -
LARGE-SCALE LIGUID PHASE EPITAXY OF MULTIPLE LAYER III-V SEMICONDUCTOR COMPOUNDS
Amount: $50,000.00ASTROPOWER PROPOSES TO DEVELOP A LARGE-SCALE, HIGH-THROUGHPUT LIQUID PHASE EPITAXIAL (LPE) REACTOR FOR THEFABRICATION OF MULTI-LAYER III-V SEMICONDUCTOR DEVICES. A DESIGN GOAL OF 1000 CM(2) PER HOUR H ...
SBIRPhase I1991National Science Foundation -
CONFORMAL HETEROEPITAXY OF GAAS AND INP ON SILICON AND SAPPHIRE SUBSTRATES
Amount: $50,000.00CONFORMAL VAPOR PHASE EPITAXY (CVPE) IS A NEW TECHNIQUE FOR TWO-DIMENSIONAL CONSTRAINED GROWTH OF THIN SEMICONDUCTOR FILMS USING A HALIDE VAPOR TRANSPORT PROCESS. THIS TECHNIQUE WILL BE APPLIED TO THE ...
SBIRPhase I1991National Science Foundation -
HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS
Amount: $500,000.00N/A
SBIRPhase II1991Department of Defense Missile Defense Agency -
HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS
Amount: $496,519.00N/A
SBIRPhase II1991Department of Defense Missile Defense Agency -
THIN CRYSTALLINE SILICON FILM PHOTOVOLTAIC SOLAR CELLS AND ARRAYS ON FLEXIBLE SUBSTRATES
Amount: $50,000.00N/A
SBIRPhase I1991Department of Defense Missile Defense Agency -
ALUMINUM-GALLIUM-ARSENIDE TOP SOLAR CELL FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRATOR WITH IMPROVED AMO EFFICIENCY
Amount: $300,000.00INCREASES IN SOLAR CELL EFFICIENCY CAN BE ACHIEVED WITH TANDEM MULTI-JUNCTION STRUCTURES TO IMPROVE THE PERFORMANCE AND SCALE OF SPACE PHOTOVOLTAIC CONCENTRATORS. THE "TOP SOLAR CELL" TANDEM APPROACH ...
SBIRPhase II1990Department of Defense Missile Defense Agency -
HIGH TEMPERATURE SURVIVABLE CONTACTS FOR GALLIUM ARSENIDE SPACE SOLAR CELLS
Amount: $299,000.00EXISTING METALLIC-TYPE CONTACTS ON GALLIUM ARSENIDE (GAAS) HAVE NOT BEEN STABLE AT HIGH TEMPERATURES BECAUSE OF INTERDIFFUSION AND/OR ALLOYING OF THE GAAS TOP LAYER. HIGH TEMPERATURE CONTACTS TO GAAS ...
SBIRPhase II1990Department of Defense Missile Defense Agency -
THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES
Amount: $487,000.00UNIFORM LARGE AREA, DEVICE QUALITY INDIUM PHOSPHIDE (INP) EPITAXIAL LAYERS ON INSULATING SUBSTRATES COULD LEAD TO THE DEVELOPMENT OF A NEW GENERATION OF PRODUCIBLE, RADIATION-HARDENED MICROELECTRONIC ...
SBIRPhase II1990Department of Defense Missile Defense Agency