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THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
9467
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
9467
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ASTROPOWER, INC.
Solar Park Newark, DE 19716
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1990
Title: THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $487,000.00
 

Abstract:

UNIFORM LARGE AREA, DEVICE QUALITY INDIUM PHOSPHIDE (INP) EPITAXIAL LAYERS ON INSULATING SUBSTRATES COULD LEAD TO THE DEVELOPMENT OF A NEW GENERATION OF PRODUCIBLE, RADIATION-HARDENED MICROELECTRONIC AND OPTOELECTRONIV INTEGRATED CIRCUITS. INP ALLOYS OFFER THE ADVANTAGES OF: PROVEN RESISTANCE TO RADIATION DAMAGE; LOWER SURFACE RECOMBINATION THAN GAAS; HIGH PEAK ELECTRON VELOCITY; AND BANDGAPS THAT MATCH THE LOW-ATTENUATION WINDOW IN SILICA-BASED OPTICAL WAVEGUIDES. IN THIS STUDY, A SIMPLE METHOD OF GROWING CRYSTALLINE INP HETEROLAYERS ON INSULATING SUBSTRATES IS BEING INVESTIGATED. THIS INVESTIGATION APPLIES SOME OF THE TECHNOLOGIES DEVELOPED IN PRODUCING GAAS/SI HETEROSTRUCTURES. THE SUCCESSFUL DEMONSTRATION OF THIS CONCEPT WILL ALLOW THE DEVELOPMENT OF RADIATION-HARD, VLSI MICROELECTRONIC COMPONENTS INCORPORATING INP-ON-INSULATOR TECHNOLOGY. APPLICATIONS FORTHIS TECHNOLOGY INCLUDE NEURAL NETWORK LOGIC AND OPTICAL INTERCONNECT/PROCESSING SCHEMES.

Principal Investigator:

James B Mcneely
3023660400

Business Contact:

Small Business Information at Submission:

Astro-systems Inc.*
30 Lovett Ave Newark, DE 19711

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No