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CONFORMAL HETEROEPITAXY OF GAAS AND INP ON SILICON AND SAPPHIRE SUBSTRATES

Award Information

Agency:
National Science Foundation 		Branch:
N/A 		Award ID:
14272 		Program Year/Program:
1991 / SBIR
Agency Tracking Number:
14272 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
ASTROPOWER, INC.
Solar Park Newark, DE 19716
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1991
Title: CONFORMAL HETEROEPITAXY OF GAAS AND INP ON SILICON AND SAPPHIRE SUBSTRATES
Agency: NSF
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

CONFORMAL VAPOR PHASE EPITAXY (CVPE) IS A NEW TECHNIQUE FOR TWO-DIMENSIONAL CONSTRAINED GROWTH OF THIN SEMICONDUCTOR FILMS USING A HALIDE VAPOR TRANSPORT PROCESS. THIS TECHNIQUE WILL BE APPLIED TO THE GROWTH OF GAAS AND INP FILMS ON SILICON AND SAPPHIRE SUBSTRATES. EPITAXIAL-LATERALOVERGROWTH WITH HIGH ASPECT RATIOS IS ACHIEVED BY CONFINING GROWTH TO A THIN VOID SPACE BOUNDED BY AN OXIDE-MASK COATINGTHE SUBSTRATE AND AN ADJACENT OVERHANGING MASK. THIS TECHNIQUE HAS EXCELLENT POTENTIAL FOR REDUCING THE DETRIMENTAL EFFECTS OF LATTICE-MISMATCH AND THERMAL STRESS TO YIELD LOW-DEFECT HETEROEPITAXIAL FILMS. THE FEASIBILITY OF CVPE FOR GAAS-ON-SILICON, GAAS-ON-SAPPHIRE, INP-ON-SILICON, AND INP-ON-SAPPHIRE WILL BE STUDIED WITH EXPERIMENTAL EMPHASIS ON GAAS-ON-SILICON. HETEROEPITAXIAL MATERIAL WILL BE CHARACTERIZED AND MINORITY CARRIER DEVICES,SUCH AS PHOTODETECTORS AND LEDS, FABRICATED WITH THE HETEROEPITAXIAL FILMS, WILL BE EVALUATED.

Principal Investigator:

Michael G. Mauk
Research Engineer
0

Business Contact:

Small Business Information at Submission:

Astropower
30 Lovett Ave Newark, DE 19711

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No