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GaP ZnS for Blue Light Emitting Diodes

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
18103
Program Year/Program:
1993 / SBIR
Agency Tracking Number:
18103
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ASTROPOWER, INC.
Solar Park Newark, DE 19716
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1993
Title: GaP ZnS for Blue Light Emitting Diodes
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $345,000.00
 

Abstract:

AstroPower is developing a two-junction monolithic tandem solar cell composed of (AlxGa1-x)0.51In.49P lattice matched to GaAs for use as the top cell in a three-junction, two-terminal tandem stack. This tunable bandgap material system is capable of current matching, at 2.03eV, in a two-junction monolithic tandem solar cell two terminal design of (AlxGa1-x)0.51In0.49P/GaAs yielding a best case predicted efficiency of 27.2 %. This solar cell can in turn be applied as a current matched top cell on a triple-junction, two-terminal configuration with silicon solar cells with a predicted efficiency of 34.1%. The Al-Ga-In-P material system can also be useful for integration of sensor arrays, monolithic LED displays, or optical computing systems as well as ultra-bright green LED and laser technology with a bandgap as high as 2.3 eV.

Principal Investigator:

Robert B. Hall
3023660400

Business Contact:

Small Business Information at Submission:

Astropower, Inc.
Solar Park Newark, DE 19716

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No