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Large Area Thin Film Silicon Carbide Using Zone Melt Synthesis and LPE

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
18104
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
18104
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ASTROPOWER, INC.
Solar Park Newark, DE 19716
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1992
Title: Large Area Thin Film Silicon Carbide Using Zone Melt Synthesis and LPE
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

AstroPower is developing a new process for the growth of large area, thin film 3C-SiC using a proprietary deposition technique followed by liquid phase epitaxy (LPE). Successful development of the growth process will provide high quality, thin film SiC in typical silicon wafer areas, allowing compatibility with existing silicon circuit foundries for devices where SiC is the material of choice. New techniques will be used to control the crystallization of SiC on single crystal silicon and anneal out defects at the SiC/Si interface. LPE layers will form device active layers providing high quality material by further annealing growth defects and minimizing stress induced defects which plague state-of-the-art 3C-SiC on silicon. SiC offers a unique combination of properties that are ideal for semiconductor devices which operate at high temperatures or deliver high power at microwave frequencies and is a suitable material for the fabrication of wide bandgap LEDs and detectors.

Principal Investigator:

Sandra Collins
3023660400

Business Contact:

Small Business Information at Submission:

Astropower, Inc.
Solar Park Newark, DE 19716

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No