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(GAP)1-X(ZNS)X:A NEW TUNABLE WIDE-BANDGAP MATERIAL FOR BLUE LIGHT EMITTING…

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
21575
Program Year/Program:
1993 / SBIR
Agency Tracking Number:
21575
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ASTROPOWER, INC.
Solar Park Newark, DE 19716
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1993
Title: (GAP)1-X(ZNS)X:A NEW TUNABLE WIDE-BANDGAP MATERIAL FOR BLUE LIGHT EMITTING DIODES AND DETECTORS OF ULTRAVIOLET RADIATION
Agency: NSF
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

THE GROWTH AND DEVELOPMENT OF A (GAP)1-X(ZNS)X-BASED MATERIAL IS BEING ENGINEERED TO PREPARE AN UTEROPOLAR, DIRECT BANDGAP MATERIAL. THIS TYPE OF MATERIAL WITH BANDGAP IN EXCESS OF 2.6 EV CAN BE EMPLOYED IN BLUE LIGHT-EMITTING DIODES, AND IN UV DETECTORS CAPABLE OF SUPERIOR PERFORMANCE COMPARED TO SILICON, IN HIGH TEMPERATURE, HIGH RADIATION ENVIRONMENTS SUCH AS IN EARTH ORBIT AND PARTICLE ACCELERATORS. FOR A BLUE LED, THE DEVELOPMENT OF THIS MATERIAL SYSTEM IS LEADING TO LUMINOUS INTENSITIES OF 80 TO 300 MCD COMPARED TO THE 20 MCD OF CURRENTLY AVAILABLE SIC LEDS. IT IS THE PURPOSE OF THE WORK TO EXPLORE FOR SOLID SOLUTION COMPOSITIONS OF (GAP)1-X(ZNS)X THAT ARE AMPHOTERIC AND CHARACTERIZED BY DIRECT BANDGAPS GREATER THAN 2.6 EV, AND TO DEMONSTRTE EPITAXIAL GROWTH TECHNIQUES WHICH HAVE MANUFACTURING SCALE POTENTIAL.

Principal Investigator:

Margaret H Hannon
3023660400

Business Contact:

Small Business Information at Submission:

Astropower Inc.
Solar Park Newark, DE 19716

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No