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LOW-DEFECT SIC MATERIAL BY LIQUID-PHASE EPITAXIAL LATERAL OVERGROWTH

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
25575
Program Year/Program:
1996 / SBIR
Agency Tracking Number:
25575
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ASTROPOWER, INC.
Solar Park Newark, DE 19716
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1996
Title: LOW-DEFECT SIC MATERIAL BY LIQUID-PHASE EPITAXIAL LATERAL OVERGROWTH
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $734,497.00
 

Abstract:

We propose a new epitaxial growth technology for low-defect SiC substrates based on metallic solution growth of SiC on silicon and SiC wafers. A significant feature of the our approach is the use of epitaxial lateral overgrowth for "defect filtering." In the Phase I proposal, we present arguments that the proposed technology will lead to SiC material of unprecedented quality with respect to defects and impurities. Improved crystal growth processes will also be possible using reduced growth temperatures, optimized melt compositions, nitrogen doping with ammonia precursors, and rare-earth impurity gettering. The proposed technology will also be developed for dielectric isolation and new device structures which incorporate "buried" metal mirrors and "buried" electrodes.

Principal Investigator:

Michael Mauk
3023660400

Business Contact:

Small Business Information at Submission:

Astropower, Inc.
Solar Park Newark, DE 19716

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No