LOW-DEFECT SIC MATERIAL BY LIQUID-PHASE EPITAXIAL LATERAL OVERGROWTH
Agency / Branch:
DOD / MDA
We propose a new epitaxial growth technology for low-defect SiC substrates based on metallic solution growth of SiC on silicon and SiC wafers. A significant feature of the our approach is the use of epitaxial lateral overgrowth for "defect filtering." In the Phase I proposal, we present arguments that the proposed technology will lead to SiC material of unprecedented quality with respect to defects and impurities. Improved crystal growth processes will also be possible using reduced growth temperatures, optimized melt compositions, nitrogen doping with ammonia precursors, and rare-earth impurity gettering. The proposed technology will also be developed for dielectric isolation and new device structures which incorporate "buried" metal mirrors and "buried" electrodes.
Small Business Information at Submission:
Principal Investigator:Michael Mauk
Solar Park Newark, DE 19716
Number of Employees: