HIGH SPEED SHEET GROWTH OF THIN SILICON

Award Information

Agency: Department of Energy	Branch: N/A	Award ID: 27107	Program Year/Program: 1994 / SBIR
Agency Tracking Number: 27107	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: ASTROPOWER, INC.
Solar Park Newark, DE 19716
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 1: Fiscal Year: 1994

Title: HIGH SPEED SHEET GROWTH OF THIN SILICON

Agency: DOE

Contract: N/A

Award Amount: $75,000.00

Abstract:
A NOVEL SILICON DEPOSITION PROCESS CAPABLE OF DEPOSITING HIGH QUALITY THIN-FILM SILICON LAYERS ON LOW COST SUPPORTING SUBSTRATES WILL BE INVESTIGATED IN PHASE I. THE SUBSTRATE WILL INCLUDE A REFLECTOR FOR LIGHT TRAPPING. THE PLANNED DEPOSITION PROCESS WILL ALLOW THE FORMATION OF SILICON LAYERS 20 TO 30 MICRONS THICK, OPTIMIZING THE PERFORMANCE OF CRYSTALLINE SILICON AS A SOLAR CELL MATERIAL. THIS NEW METHOD OF DEPOSITING THIN SILICON LAYERS IS BASED ON AN EXTENSION OF EXISTING WELL DEVELOPED METALLURGICAL PROCESSES. THE OBJECTIVE OF THIS PROJECT WILL BE TO DEVELOP THE DEPOSITION PROCESS TO PRODUCE 20 TO 30 MICRON THICK LAYERS OF SILICON CONTINUOUSLY. THE ADVANTAGES OF SUCH A PROCESS WILL INCLUDE (1) HIGH DEPOSITION RATES (UP TO 100 TIMES HIGHER THAN CONVENTION CHEMICAL VAPOR DEPOSITION), (2) CONTINUOUS PRODUCTION, (3) HIGH PURITY, AND (4) LOW COST. AS-DEPOSITED FILMS WILL BE EVALUATED FOR EFFICIENCY POTENTIAL.

Principal Investigator:
Jeffry E Cotter
3023660400

Business Contact:

Small Business Information at Submission:

Astro Power Inc.
Solar Park Newark, DE 19716

EIN/Tax ID:

DUNS: N/A

Number of Employees: N/A

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No