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InAsSb/GaSb Infrared Light-Emitting Diodes (LED's)

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
26169
Program Year/Program:
1994 / SBIR
Agency Tracking Number:
26169
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
ASTROPOWER, INC.
Solar Park Newark, DE 19716
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1994
Title: InAsSb/GaSb Infrared Light-Emitting Diodes (LED's)
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $60,000.00
 

Abstract:

AstroPower proposes to develop intense, mass-producible, low-cost 4 to 5 micron light-emitting diodes (LED's) using liquid-phase heteroepitaxy of lattice-matched InAsSb on GaSb substrates. The brightest visible LEDs (Ultrabrights) currently available are being produced commercially by the liquid phase heteroepitaxy process using materials with bandgaps in the appropriate visible range for the particular color desired and with matched lattice parameters. Liquid phase epitaxy has routinely provided quality LED and laser devices with the highest electrical-to-optical energy conversion efficiency. Furthermore, the optical design of the proposed IR LED is expected to be enhanced by special reflector and optical design considerations currently under development at AstroPower. This program will produce long life light sources of high solid-state quality -- quality not subject to the poor reliability and fragility of incandescent bulbs. Feasibility of this approach will be domonstrated by deliverable hardware by the end of the Phase I program.

Principal Investigator:

James B. Mcneely
3023660400

Business Contact:

Small Business Information at Submission:

Astropower, Inc.
Solar Park Neward, DE 19716

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No