Abstract:An ideal transistor from a circuit designers standpoint consists of an ultra-low on-resistance, majority carrier switching, low gate current drive, and normally-off design. These features are inherent in the silicon carbide (SiC) power MOSFET, with the small footnote that the… more
Abstract:… development of its patented high temperature gate driver technology, enabling the next generation of high-efficiency, high power density converters. At the conclusion of Phase II, APEI, Inc. will have designed, fabricated, and tested a high temperature (300 C) SiC… more
Abstract:…, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC… more
Abstract:…nce and fuel efficiency over current metal-based designs. Physical Sciences Inc. (PSI) and the University of California Santa Barbara (UCSB will develop and utilize Integrated Computational Materials Engineering (ICME) tools that will help us design and fabricate enhanced … more
Abstract:… systems will require silicon carbide ceramic composites in the reactor core to minimize operational costs and enhance safety. Currently, no ceramic composite fabrication method has been successfully demonstrated that enables rapid, affordable bonding of impermeable SiC… more
Abstract:… the need for enhanced accident tolerance. Of particular concern is the overheating of standard zirconium alloy cladding material in a loss of coolant accident (LOCA). One of the leading, high-risk/high-reward candidates for future claddings is a silicon carbide (SiC) composite… more
Abstract:ABSTRACT: Silicon carbide based power devices has several advantages because it can be used in very high power, high temperature, high frequency applications, where conventional silicon devices cannot be used. Despite significant advancement in SiC semiconductor technology in… more
Abstract:… (2730 C), low specific weight (3.21 g/cm3), excellent mechanical strength ( & gt;600 MPa) and elastic modulus ( & gt;400 GPa), and a high thermal conductivity (490 W/m-K). Monolithic silicon carbide faces the disadvantage of being inherently brittle while SiC… more
Abstract:In this phase-I proposal, the effect of terrestrial cosmic rays on the failure rate of commercial
1200V SiC power MOSFETs will be studied. The goal of the study is to quantify the appropriate breakdown voltage de-rating needed for SiC MOSFETs subject to cosmic rays. The failure… more
Abstract:…l also be tried for comparison. BENEFIT: Produce a heating elemnt that meets AEDC's immediate needs for testing hypervelocity engines. Develop a market for high temperature heating elemenst to replace Moly-Disilicide heating elements in laboratory applications and SiC… more
Abstract:This Small Business Innovation Research Phase I project is designed to evaluate a novel interphase nanocoating designed for Silicon Carbide (SiC) fibers, which is intended to behave as a biomimetic immune system for high-temperature Ceramic Matrix Composites (CMCs) exposed to an… more
Abstract:SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Smaller switching and on-state losses coupled with higher voltage blocking capability, and especially its high operating temperature make SiC the ideal semiconductor for high… more
Abstract:This SBIR Phase I project seeks to develop an advanced, flexible, robust, high-power density, high-voltage (600 V), solid-state circuit protection device (SSCPD) through the incorporation of silicon carbide (SiC) device technology, the implementation of advanced power packaging,… more
Abstract:Arkansas Power Electronics International, Inc. (APEI, Inc.), and Moog, Inc. have allied to form a team devoted to the development of an intelligent, multi-channel, highly-miniaturized, high-temperature, Silicon Carbide (SiC) based Solid-State Energy Distribution Unit (SSEDU) to… more
Abstract:Arkansas Power Electronics International, Inc. will design and develop a high performance, high voltage ( & gt; 15 kV) SiC MCPM that is low cost, manufacturable, reliable and reworkable. The target utility scale energy storage applications include power conversion systems… more
Abstract:… heat transfer rates under real-world microchip operating conditions as found in shipboard Transmit/Receive modules. With guidance from a large supplier of Naval radar systems, ThermAvant will prototype OHP-based cooling solutions that can be directly attached to GaN, Si or … more
Abstract:High temperature reliability is needed to design distributed power conditioning systems in next generation, high power density SiC and GaN-based electronics. New high energy density capacitors are needed to reduce the volume and weight of power conditioning modules and high… more
Abstract:…gy (the R & D division of Frequency Management International, FMI) proposes to deliver a comprehensive, and fully investigated & validated feasibility study (in Phase 1) for a novel approach leading to design & fabrication of extreme Environment Silicon Carbide (SiC)… more
Abstract:Silicon Carbide (SiC) electronics has the potential for revolutionizing the high temperature high power electronics industry. There is a strong need for tools and models for circuit design using the new SiC power devices that are coming to market. Our work in this project will… more
Abstract:SiC power electronics are ideally suited for reducing the size and weight of power electronics systems that are used in wind power converters. Present power electronics systems require large transformers which operate a modest frequencies that prevents their use on top of the… more
Abstract:…, yet a power device technology that fully exploits the superior performance advantages of the GaN-Si platform has not been developed. Through a combination of novel epitaxial growth, ingenious, yet robust device designs and process technology, the GeneSiC-Cornell… more
Abstract:Capitalizing on a potent confluence of expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC Semiconductor and Cornell University jointly propose a SBIR program focused on the development of 15 kW/300?C-rated… more
Abstract:…, unmet needs, and opportunities. This SBIR topic and recent vehicle requirements from major military vehicle manufacturers validate the need for an intelligent high voltage power distribution solution. Global ET"s solution will be a unique combination of SiC technology… more
Abstract:… within a ceramic matrix produces a material with significantly greater toughness, flaw insensitivity, and strain capability than a monolith, while maintaining high-temperature refractory capabilities. Silicon carbide fiber-reinforced silicon carbide (SiC/SiC) offers… more
Abstract:… for all the 400 Hz distribution equipment. In this Phase I SBIR, we propose to develop a 40 kW high power density, affordable PUC modules that have three times the power density and half the cost of the MFPMs used in the PNCC. We propose to develop these modules using SiC… more
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