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Displaying 826 – 850 of 933 Awards
Company: Materials & Electrochemical Research (MER) Corp. Agency/Program/Year/Phase: DOE / SBIR / 1993 / 1
Abstract: N/A
Company: Materials Modification Inc Agency/Program/Year/Phase: DOD / SBIR / 1993 / 1
Abstract: OPTICS USED IN SENSORS OR MISSILE SYSTEMS ARE MADE FROM SAPPHIRE, OR SILICON CARBIDE BECAUSE OF THEIR EXCELLENT OPTICAL OR INSULATING PROPERTIES, THEIR INERT, AND THEIR ABILITY TO RESIST HARSH ENVIRONMENTS. POLISHING SAPPHIRE BY MECHANICAL OR MECHANOCHEMICAL… more
Company: FOSTER-MILLER, INC. Agency/Program/Year/Phase: DOD / SBIR / 1993 / 1
Abstract: Foster-Miller proposes to develop processes for GaAs semiconductor interconnection on diamond and silicon carbide substrates for (MMIC) modules. Foster-Miller also proposes to develop high temperature bonding processes for bonding copper heat-sinks to diamond… more
Company: Pdr, Inc. Agency/Program/Year/Phase: DOD / SBIR / 1993 / 1
Abstract: … FABRICATED AND QUALIFIED INFRARED OPTICAL TELESCOPES WERE PRESENTED AT THE APRIL 1992 SPIE CONFERENCE IN ORLANDO FL. THE NEXT PROPOSED EVOLUTION OF THIS CONCEPT IS TO DESIGN AN ULTRA-LIGHTWEIGHT OPTICAL TRAIN, FROM ONE OF THREE DESIRABLE MATERIALS; CAST ALUMINUM, SXA OR SILICON… more
Company: Physical Optics Corporation Agency/Program/Year/Phase: DOD / SBIR / 1993 / 1
Abstract: … FEATURE EXTRACTOR WILL BE DELIVERED. THE PROPOSED SYSTEM WILL BE HIGHLY RUGGED, PORTABLE, AND ROBUST, CAPABLE OF PERFORMING REAL-TIME ATR OPERATIONS FOR LOW SIGNAL-TO-NOISE RATION IMAGES. 498 OPTICS USED IN SENSORS OR MISSILE SYSTEMS ARE MADE FROM SAPPHIRE, OR SILICON … more
Company: Polaris Research Agency/Program/Year/Phase: NSF / SBIR / 1993 / 1
Abstract: …ODS AT OR NEAR EQUILIBRIUM CONDITIONS ARE LIMITED WITH RESPECT TO PEAK PRESSURE AND TEMPERATURE CAPABILITY. THEY ARE ALSO VERY LIMITED IN THEIR CAPABILITY TO PRODUCE HEAT-TREATABLE CERAMIC COMPOSITES. RESEARCHERS ARE APPLYING A NON-EQUILIBRIUM METHOD FOR CONSOLIDATION OF SILICON… more
Company: R D Webb Co Agency/Program/Year/Phase: DOD / SBIR / 1993 / 1
Abstract: N/A
Company: Research And Manufacturing Co Agency/Program/Year/Phase: DOE / SBIR / 1993 / 2
Abstract: … AND TEST ULTRASONIC THERMOMETERS WITH NON-METAL SENSING ELEMENTS FOR TEMPERATURE MEASUREMENT AND CONTROL IN HIGHLY CORROSIVE MANUFACTURING ENVIRONMENTS. CANDIDATE NON-METAL MATERIALS FOR THE SENSING ELEMENT INCLUDE SAPPHIRE, ZIRCONIUM OXIDE, GRAPHITE,SILICON CARBIDE, AND… more
Company: Sandia Systems, Inc. Agency/Program/Year/Phase: NASA / SBIR / 1993 / 1
Abstract: N/A
Company: Tsi Research, Inc. Agency/Program/Year/Phase: DOE / SBIR / 1993 / 2
Abstract: PHASE I OF THIS PROJECT IS PERFORMING RESEARCH TO DEVELOP A LOW ACTIVATION BLANKET THAT USES SILICON CARBIDE (SIC) COMPOSITE MATERIAL AS THE STRUCTURE, LIQUID LEAD-LITHIUM (PB-LI) ALLOY AS THE COOLANT, AND TRITIUM BREEDING MATERIAL FOR APPLICATION TO A… more
Company: Ultramet Agency/Program/Year/Phase: DOD / SBIR / 1993 / 1
Abstract: Continuous silicon carbide (SiC) fiber-reinforced ordered titanium intermetallic alloy (Ti3Al) matrix composites are enabling materials for next-generation turbojet compressor and hypervelocity vehicle airframe applications. They possess unique combinations… more
Company: Ultramet Agency/Program/Year/Phase: NSF / SBIR / 1993 / 1
Abstract: WIDE-BANDGAP SEMICONDUCTORS SUCH AS BETA-SILICON CARBIDE (BETA-SIC) HAVE THE POTENTIAL TO BE USEFUL IN THE FABRICATION OF ELECTRONIC DEVICES THAT CAN OPERATE AT HIGH TEMPERATURES AND HIGH POWER LEVELS IN CORROSIVE ENVIRONMENTS. SUCH DEVICES CURRENTLY UNDER… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 2
Abstract: THE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: … variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon … more
Company: Apa Optics, Inc. Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: WE PROPOSE A PHASE I RESEARCH PROGRAM AIMED AT DEPOSITING SINGLE CRYSTAL BN FILMS OVER SAPPHIRE AND SILICON CARBIDE SUBSTRATES. OUR PLAN IS TO EMPLOY A UNIQUE PHOTO-ASSISTED SWITCHED ATOMIC LAYER EPITAXY PROCESS. THIS WE FEEL WILL REDUCE THE SINGLE CRYSTAL… more
Company: ASTROPOWER, INC. Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: AstroPower is developing a new process for the growth of large area, thin film 3C-SiC using a proprietary deposition technique followed by liquid phase epitaxy (LPE). Successful development of the growth process will provide high quality, thin film SiC in typical silicon wafer areas, allowing… more
Company: CREE RESEARCH, INC. Agency/Program/Year/Phase: NASA / SBIR / 1992 / 1
Abstract: N/A
Company: Holicon Corpon Agency/Program/Year/Phase: HHS / SBIR / 1992 / 1
Abstract: … WILL ALLOW THE LASER TO BE USED MORE EASILY AND IN A WIDER VARIETY OF PROCEDURES THAN ARE CURRENTLY POSSIBLE. INSTRUMENTATION WILL BE DESIGNED FOR THE REQUIREMENTS OF NEUROSURGERY, BUT WILL BE USEFUL IN OTHER AREAS OF LASER SURGERY AS WELL. CHEMICAL VAPOR DEPOSITED … more
Company: Implant Sciences Corporation Agency/Program/Year/Phase: NSF / SBIR / 1992 / 1
Abstract: …GH TEMPERATURE CHEMICAL DEPOSITION OR SPUTTERING WERE AVAILABLE. A METHOD IS PROPOSED TO PRODUCE AN INTENSE LOW ENERGY ION BEAM OF CARBON THAT IS PARTICULARLY WELL SUITED FOR REACTIVE IBAD COATING OF CARBIDES. THE GENERAL TECHNIQUE WILL BE DEMONSTRATED USING A SILICON … more
Company: INRAD Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: Two methods for growing large beta-SiC proposed: (l) top-seeded solution growth under high pressure and (2) sublimation. We believe these two are the most promising techniques for producing large hauls, of beta-SiC, suitable for use as substrates for epitaxial growth of beta-SiC thin films. In the… more
Company: KULITE SEMICONDUCTOR PRODUCTS, INC. Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: N/A
Company: Materials & Electrochemical Research (MER) Corp. Agency/Program/Year/Phase: NASA / SBIR / 1992 / 1
Abstract: A NEW AND UNIQUE PROCESS (CHEMICAL VAPOR REACTION; CVR) TO CONVERT GRAPHITE STRUCTURES TO LOW DENSITY SIC STRUCTURE WILL BE INVESTIGATED TO PRODUCE HIGH TEMPERATURE THERMAL PROTECTION MATERIALS. AVAILABLE HEAT SHIELDS INCLUDE CARBON PHENOLICS WHICH OCCUPY A LOT OF SPACE AND MORE RECENTLY DEVELOPED… more
Displaying 826 – 850 of 933 Awards
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