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Strategies for Wide-Bandgap, Inexpensive Transistors for Controlling High Efficiency Systems (SWITCHES) (STTR)

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Agency: Department of Energy
Program/Year: STTR / 2013
Solicitation Number: DE-FOA-0000941
Release Date: June 11, 2013
Open Date: June 11, 2013
Close Date: July 19, 2013
: Strategies for Wide-Bandgap, Inexpensive Transistors for Controlling High Efficiency Systems (SWITCHES) (STTR)
Description:

This program seeks to fund transformational advances in wide bandgap (WBG) materials, device fabrication, and device architectures. The goal of this program is to enable the development of high voltage (1200V+), high current (100A) single die power semiconductor devices that, upon ultimately reaching scale, would have the potential to reach functional cost parity with silicon power transistors while also offering breakthrough relative circuit performance (low losses, high switching frequencies, and high temperature operation). These transformational technologies would have promise to reduce the barriers to ubiquitous deployment of low-loss WBG power semiconductor devices in stationary and transportation energy applications.

Keywords: Wide Bandgap Technologies, Semiconductor Devices, Energy Applications