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Advanced Manufacturing Process for Growth of Gallium Nitride Crystals

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00164-04-C-6067
Agency Tracking Number: 022-0625
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: MDA02-021b
Solicitation Number: 2002.2
Solicitation Year: 2002
Award Year: 2004
Award Start Date (Proposal Award Date): 2004-08-20
Award End Date (Contract End Date): 2006-08-19
Small Business Information
8829 Midway West Road
Raleigh, NC 27617
United States
DUNS: 020080607
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Mark Williams
 Director of Wafering
 (919) 789-8880
Business Contact
 Edward Pupa
Title: President and CEO
Phone: (919) 789-8880
Research Institution

Gallium nitride substrates are now being produced by several manufacturers, however significant market penetration is being limited by high prices and low quantities. This Phase II program is aimed at addressing both of these issues by developing a growth process for the production of 1cm thick boules at a growth rate of 1mm per hour. The Phase I program met and exceeded the goals of demonstrating high rate growth, in excess of 500um/hr, of 2" diameter 5mm thick GaN boules. The Phase II will continue optimization of the bulk growth process and will assemble a crystal growth reactor designed for high rate transport. Computer modeling will be used to optimize temperature profile, gas flows, and crystal growth qualities. 50mm single crystal GaN substrates produced by Kyma Technologies will be used as the seed material to ensure thermal and lattice matching. The combination of this innovative crystal growth technique and the use of GaN seeded growth, has the possibility of reducing the dislocation density to below 10^4 per cm^2 in GaN substrates. The main emphasis of the Phase II effort will be on obtaining high quality semi-insulating GaN crystals. At the end of the Phase II effort Kyma will deliver epi-ready GaN wafers ready for device production line.

* Information listed above is at the time of submission. *

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