You are here

Band-Gap Engineered Varistors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 31995
Amount: $60,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1996
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
2849 E. Elvira Rd.
Tucson, AZ 85706
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Thomas Venable
 (520) 294-7115
Business Contact
Phone: () -
Research Institution
N/A
Abstract

Solid-state electronic devices are often subjected to high voltage transients generated by switching, lightning, or electrostatic discharge. These transients can cause mission critical components to fail. Varistors are increasingly used to avoid such failures. The current varistor devices, however, are not well suited for high frequency applications and the increasing trend towards device miniaturization. This program seeks to direct efforts to remedy this. Our technical approach is to synthesize and fabricate varistors from titanates whose grains and grain boundaries have been band-gap engineered at nanometer scale ( 10-7 to 10-9 m). It is anticipated that the proposed varistors will be orders of magnitude smaller, lighter, and yet perform significantly better than conventional varistors. During Phase I, ADI will establish the proof-of-concept. Phase II effort will seek to optimize the device and its fabrication, and field test prototype varistors. Phase III will commercialize the technology.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government