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BMDO 014A- Novel System for Bulk Growth of Semi-Insulating SiC

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: F33615-02-M-5422
Agency Tracking Number: 02-0696
Amount: $69,748.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
Suite 100, One Bridge Street
Newton, MA 02458
United States
DUNS: 807651260
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Shari Motakef
 (617) 796-8882
Business Contact
 Shari Motakef
Title: President
Phone: (617) 796-8882
Research Institution

"It is proposed to develop a novel growth system capable of producing large diameter and long Semi-Insulating SiC crystals. The proposed system aims to achieve semi-insulating properties in the crystal by reducing the impurity levels in the reactorassociated with the graphite containment elements. The proposed growth system is based on using gas precursors instead of SiC powder, and uses a novel approach to reduce/eliminate residual impurities. It promises to reduce the residual impurities to atleast one order of magnitude lower than that achievable in laboratory HTCVD systems. The proposed system would allow production of large diameter SI-SiC crystals with lengths appreciably larger than those available by current production technologies. Thelarge-volume availability of SI-SiC wafers, in turn, will result in substantial advances in high speed and high power amplifiers for radars and telecommunication systems."

* Information listed above is at the time of submission. *

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