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Conformal Passivation of High Aspect Ratio HgCdTe Surfaces by ALD Using a Novel Cd-Precursor
Title: Senior Scientist
Phone: (617) 668-6800
Email: HBhandari@RMDinc.com
Title: VP, Operations
Phone: (617) 668-6800
Email: JGladstone@RMDinc.com
Contact: Adam H Ph.D.
Address:
Phone: (312) 567-3388
Type: Federally Funded R&D Center (FFRDC)
The goal of the proposed program is to identify an effective passivation material and develop a capable passivation methodology to protect highly reticulated HgCdTe surfaces. The proposed passivation material and technique using highly conformal atomic layer deposition (ALD) will allow the DOD to develop high-performance infrared focal plane array detectors that can operate under wider operating conditions, using lower-cost processes. Specifically, we propose to develop a novel ALD inorganic precursor that will enable highly conformal coatings of passivation material with excellent chemical and electrical passivation to HgCdTe surfaces. Initial testing of the proposed passivation material will be performed on planar devices, where studies will be conducted to evaluate the role of interfacial reaction in dark current noise reduction. Current standard processes for manufacturing HgCdTe detectors have serious yield and reliability issues due to lack of effective passivation techniques. The proposed developments will address these issues, thereby helping improve process yield and product reliability, while simultaneously reducing process cost.
* Information listed above is at the time of submission. *