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Conformal Passivation of High Aspect Ratio HgCdTe Surfaces by ALD Using a Novel Cd-Precursor

Award Information
Agency: Department of Defense
Branch: Army
Contract: W909MY-13-C-0034
Agency Tracking Number: A13A-013-0213
Amount: $149,471.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A13A-T013
Solicitation Number: 2013.A
Solicitation Year: 2013
Award Year: 2013
Award Start Date (Proposal Award Date): 2013-09-30
Award End Date (Contract End Date): 2014-04-29
Small Business Information
Watertown, MA 02472-4699
United States
DUNS: 073804411
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Harish Bandari, Ph.D.
 Senior Scientist
 (617) 668-6800
Business Contact
 Joanne Gladstone
Title: VP, Operations
Phone: (617) 668-6800
Research Institution
 Illinois Institute of Technology
 Adam H Ph.D.
3101 South Dearborn Street Life Sciences Building - 156
Chicago, IL 60616-2852
United States

 (312) 567-3388
 Federally Funded R&D Center (FFRDC)

The goal of the proposed program is to identify an effective passivation material and develop a capable passivation methodology to protect highly reticulated HgCdTe surfaces. The proposed passivation material and technique using highly conformal atomic layer deposition (ALD) will allow the DOD to develop high-performance infrared focal plane array detectors that can operate under wider operating conditions, using lower-cost processes. Specifically, we propose to develop a novel ALD inorganic precursor that will enable highly conformal coatings of passivation material with excellent chemical and electrical passivation to HgCdTe surfaces. Initial testing of the proposed passivation material will be performed on planar devices, where studies will be conducted to evaluate the role of interfacial reaction in dark current noise reduction. Current standard processes for manufacturing HgCdTe detectors have serious yield and reliability issues due to lack of effective passivation techniques. The proposed developments will address these issues, thereby helping improve process yield and product reliability, while simultaneously reducing process cost.

* Information listed above is at the time of submission. *

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