Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices

Inlustra Technologies and the University of California, Santa Barbara propose to grow and characterize thick non-polar and semi-polar gallium nitride (GaN) wafers that will act as seeds for subsequent GaN boule growth. In this Phase I STTR effort, Inlustra will first develop non-polar and semi-polar GaN films with smooth surfaces and minimal wafer bowing and cracking. The growth conditions for each type of crystallographic plane will be primarily optimized with respect to surface morphology. Defect reduction methods will then be applied to achieve uniformly low extended defect density across the wafer. UCSB researchers will conduct extensive microstructural, optical, and electrical characterization on these non-polar and semi-polar thick films to evaluate their utility as seeds for equiaxed GaN boule growth.