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Development of Dilute Nitride SL Technology for VLWIR Detectors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-06-C-7510
Agency Tracking Number: B064-011-0126
Amount: $99,826.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA06-T011
Solicitation Number: N/A
Solicitation Year: 2006
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-08-23
Award End Date (Contract End Date): 2007-02-23
Small Business Information
1450 South Rolling Road
Baltimore, MD 21227
United States
DUNS: 171899719
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: Yes
Principal Investigator
 Ayub Fathimulla
 Vice President, R&D
 (410) 455-5830
Business Contact
 Olaleye Aina
Title: President
Phone: (410) 455-5594
Research Institution
 James Kolodzey
Dept of Electrical & Computer
Newark, DE 19716
United States

 (302) 831-1164
 Nonprofit College or University

Epitaxial Technologies' overall objective is to develop innovative detector technologies that can be used to produce enhanced quantum efficiency and high detectivity VLWIR sensors that can operate at high temperatures. The goal of Phase I will be to investigate dilute nitride strain layer superlattice material structures that are capable of enhanced gain and detectivity and then grow and fabricate them to achieve detectivity in excess of 1E10 Jones to establish feasibility of the detector concept. We will accomplish this by designing and growing dilute nitride-based strained layer superlattice detector structures and by fabricating and testing the detectors. During Phase II, we will finalize the material structure, growth process, and fabrication process of the detectors. Further in Phase II, we will design, fabricate, and test 64 x 64 FPAs and demonstrate high operating temperatures as well as high pixel uniformity and improved resolution with reduced noise.

* Information listed above is at the time of submission. *

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