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Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications
Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-13-P-1184
Agency Tracking Number: N13A-025-0190
Amount:
$77,868.00
Phase:
Phase I
Program:
STTR
Solicitation Topic Code:
N13A-T025
Solicitation Number:
2013.A
Timeline
Solicitation Year:
2013
Award Year:
2013
Award Start Date (Proposal Award Date):
2013-07-01
Award End Date (Contract End Date):
2014-04-30
Small Business Information
11531 Swains Lock Terrace
Potomac, MD
-
United States
DUNS:
964438944
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Tejbir Phool
Title: President
Phone: (301) 651-7259
Email: Tejbirsinghphool@cs.com
Title: President
Phone: (301) 651-7259
Email: Tejbirsinghphool@cs.com
Business Contact
Name: Tejbir Phool
Title: President
Phone: (301) 651-7259
Email: Tejbirsinghphool@cs.com
Title: President
Phone: (301) 651-7259
Email: Tejbirsinghphool@cs.com
Research Institution
Name: University of California Santa Barb
Contact: Umesh Mishra
Address:
Phone: (805) 893-3586
Type: Nonprofit College or University
Contact: Umesh Mishra
Address:
552 University Rd
Santa Barba, CA
93106-
United States
Phone: (805) 893-3586
Type: Nonprofit College or University
Abstract
This research seeks to develop a method of developing solid-state power amplifiers that operate at 300 Volts, achieve 100 Watt output and greater than 90% efficiency at 1 GHz with 10% bandwidths. We will seek to demonstrate switch-mode amplifiers that use a novel gate design with Gallium Nitride forming the basis for solid state power amplification.
* Information listed above is at the time of submission. *
