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Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-13-P-1184
Agency Tracking Number: N13A-025-0190
Amount: $77,868.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N13A-T025
Solicitation Number: 2013.A
Solicitation Year: 2013
Award Year: 2013
Award Start Date (Proposal Award Date): 2013-07-01
Award End Date (Contract End Date): 2014-04-30
Small Business Information
11531 Swains Lock Terrace
Potomac, MD -
United States
DUNS: 964438944
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Tejbir Phool
 (301) 651-7259
Business Contact
 Tejbir Phool
Title: President
Phone: (301) 651-7259
Research Institution
 University of California Santa Barb
 Umesh Mishra
552 University Rd
Santa Barba, CA 93106-
United States

 (805) 893-3586
 Nonprofit College or University

This research seeks to develop a method of developing solid-state power amplifiers that operate at 300 Volts, achieve 100 Watt output and greater than 90% efficiency at 1 GHz with 10% bandwidths. We will seek to demonstrate switch-mode amplifiers that use a novel gate design with Gallium Nitride forming the basis for solid state power amplification.

* Information listed above is at the time of submission. *

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