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Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-13-P-1165
Agency Tracking Number: N13A-025-0254
Amount: $79,991.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N13A-T025
Solicitation Number: 2013.A
Solicitation Year: 2013
Award Year: 2013
Award Start Date (Proposal Award Date): 2013-07-01
Award End Date (Contract End Date): 2014-04-30
Small Business Information
15 Amherst Road
Belmont, MA -
United States
DUNS: 078360128
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Natalia Palacios
 (617) 304-4254
Business Contact
 Natalia Palacios
Title: Secretary
Phone: (617) 304-4254
Research Institution
 Benjamin Snedeker
77 Massachusetts Avenue
Cambridge, MA 02139-
United States

 (617) 452-2882
 Nonprofit College or University

This project is focused on the development of a new generation of GaN-based transistors with breakdown voltages in excess of 1kV that can be used in the demonstration of power amplifiers operating at 1 GHz with power added efficiencies in excess of 90%. To achieve this performance, this project will develop new approaches to increase the breakdown voltage of GaN high electron mobility transistors, advanced epitaxial structures with minimum current collapse, and improved fabrication technology to reduce the parasitic capacitances of these devices. The device development will be closely coupled to circuit design and simulation to ensure the required record circuit-level performance.

* Information listed above is at the time of submission. *

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