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Growth of AlN Crystals

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00014-01-M-0229
Agency Tracking Number: 01-0025T
Amount: $65,136.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2001
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
5300 Mandrake Ct.
Raleigh, NC 27613
United States
DUNS: 027796494
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Raoul Schlesser
 (919) 461-2307
Business Contact
 Raoul Schlesser
Title: VP R&D
Phone: (919) 461-2307
Research Institution
 Zlatko Sitar
1001 Capability Dr., RB#1, Rm 220
Raleigh, NC 27695
United States

 (919) 515-8637
 Nonprofit College or University

The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature gradient, promises to yield high-purity AlN crystals at commercially interesting growth rates. The growthof small AlN crystals has recently been demonstrated at North Carolina State University (NCSU). Through the proposed research, Hexatech, Inc. plans to increase the size of AlN bulk crystals into the centimeter range, without compromising crystal quality.The properties of grown crystals will be evaluated at NCSU and will include (1) microstructural analyses (optical and scanning electron microscopies, x-ray diffraction, Raman spectroscopy), (2) chemical analysis (X-ray photoelectron spectroscopy), (3)identification of impurities (secondary ion mass spectroscopy, photoluminescence, optical absorption), and (4) study of electrical properties (I-V, Hall measurements).AlN wafers that eventually will be fabricated from the grown crystals will find animmediate application as lattice-matched substrates for high-quality epitaxy of III-nitrides and will enable the fabrication of superior quality AlGaN electronic and optoelectronic devices, including high-frequency amplifiers and switches, blue and UVsolid state lasers, solar-blind UV detectors, and surface acoustic wave (SAW) devices. Since the epitaxial processes and a variety of III-nitride device structures have been developed during the past ten years on less favorable substrates with largelattice mismatch, the penetration of these new AlN wafers into the market place can occur without delay and to the immediate benefit of device performance.

* Information listed above is at the time of submission. *

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