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Growth of Cr:LiCaAlF6 (Cr:LiCAF) Crystals for Laser Applications

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 17996
Amount: $49,724.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1992
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
27 Congress Street
Salem, MA 01970
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Chandra Khattak, Phd
 (508) 745-0088
Business Contact
Phone: () -
Research Institution
N/A
Abstract

Cr:LiCAF shows potential as an efficient tunable laser with good beam quality at moderate power levels. While efficient laser operation for Cr:LiCAF has been demonstrated in the laboratory, commercialization is impeded because large crystals with low scatter loss are not available. The proposed program is to adapt the Heat Exchanger Method (HEM) for growth of Cr:LiCAF crystals. Since crystal growth by HEM is carried out wih low temperature gradients, the scattering losses in Cr:LiCAF due to defects and variation in stoichiometry are minimized. The submerged solid-liquid interface in HEM minimizes the breakdown of the interface due to the nonstiochiometric phase. The nonstoichiometric phase is rejected to the last material to solidify which is near the crucible wall. Crystal growth by HEM is achieved without moving the crucible, the heat zone, or the crystal. After growth annealing of the crystal is achieved in situ, thereby reducing defect density. This feature of HEM also allows controlled cooldown so that large crystals of Cr:LiCAF may be grown.

* Information listed above is at the time of submission. *

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