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Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: FA8650-04-C-5434
Agency Tracking Number: B2-0546
Amount: $0.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2004
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
8311 Brier Creek Pkwy, Suite 105/102
Raleigh, NC 27617
United States
DUNS: 027796494
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Ramon Collazo
 Research Scientist
 (919) 515-7083
Business Contact
 Raoul Schlesser
Title: VP R&D
Phone: (919) 515-6178
Research Institution

Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will be tailored to (1) avoid SiC decomposition, (2) prepare the SiC seed surface for subsequent AlN deposition, and (3) to greatly reduce stress in the AlN single crystal. Boules will be oriented and cut into single crystalline wafers, which will be polished and, at later stages in the project, re-used as seeds.

* Information listed above is at the time of submission. *

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