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High Aspect Ratio Inorganic Resist for MEMS Structures Fabrication

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: N/A
Agency Tracking Number: 36474
Amount: $99,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
2849 E. Elvira Rd.
Tucson, AZ 85706
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dmitri Routkevitch
 (520) 294-7115
Business Contact
Phone: () -
Research Institution
N/A
Abstract

Patterning on the micron and submicron levels with high aspect ratio, high quality edge definition, and low taper of vertical edges is critical for fabrication of advanced microelectromechanical structures. Deep X-ray lithography, used in one of the major existing fabrication processes, LIGA, requires expensive exposure sources, has limited aspect ratio (1:100's), and resolution (about 1 ¿m). Polymer resist, currently used in LIGA, has low mechanical and thermal stability, which limit its processing capabilities. This program seeks to demonstrate a reliable and inexpensive patterning technology based on new inorganic resist with very high etching anistropy and unmatched combination of feature size, resolution, depth of focus, edge definition, adhesion to the substrate, chemical and mechanical stability. Besides being a matrix for depositing microstructures, proposed material can be also used as a structural element for MEMS as well as an active micro- and nano-device component. During Phase I, NRC will demonstrate the proof-of-concept. Phase II will optimize the technology, build and test device prototypes. Phase III will commercialize the technology.

* Information listed above is at the time of submission. *

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