HIGH EFFICIENCY MONOLITHIC GUNN OSCILLATORS

Award Information

Agency: Department of Defense

Branch: Army

Contract: N/A

Agency Tracking Number: 5895

Amount: $51,778.00

Phase: Phase I

Program: SBIR

Solicitation Topic Code: N/A

Solicitation Number: N/A

Timeline

Solicitation Year: N/A

Award Year: 1987

Award Start Date (Proposal Award Date): N/A

Award End Date (Contract End Date): N/A

Small Business Information

Gain Electronics Corp

22 Chubb Wy

Somerville, NJ 08876

United States

DUNS: N/A

HUBZone Owned: No

Woman Owned: No

Socially and Economically Disadvantaged: No

Principal Investigator

Name: THOMAS HIERL
Phone: (201) 218-4630

Business Contact

Phone: () -

Research Institution

N/A

Abstract

MOST GUNN DIODE OSCILLATOR APPLICATIONS CURRENTLY EMPLOY A DISCRETE GUNN DIODE EMBEDDED INTO EITHER A HYBRID OR A WAVEGUIDE MATCHING CIRCUIT. NEXT GENERATION MILITARY SYSTEMS WOULD BENEFIT FROM A MONOLITHIC DESIGN WHICH INCORPORATES THE GUNN DIODE AND ITS ASSOCIATED MATCHING CIRCUITRY ONTO ONE GAAS SUBSTRATE. THIS APPROACH OFFERS SEVERAL ADVANTAGES WHICH INCLUDE LOWER UNIT COST, BETTER REPRODUCIBILITY, SMALLER SIZE, LESS WEIGHT, AND BETTER PERFORMANCE. THIS PROGRAM WILL OPTIMIZE THE DESIGN OF A MONOLITHIC GUNN OSCILLATOR FOR OPERATION AT 35 GHZ PHASE I EFFORTS INCLUDE THE OPTIMIZATION OF THE DOPING PROFILE FOR MAXIMUM POWER AND EFFICIENCY AND THE DEVELOPMENT OF THE PROCESS TECHNOLOGY FOR PLANAR DEVICES. PLANAR DISCRETE GUNN DIODES WILL BE FABRICATED AND EVALUATED. IN PHASE II, MATCHING CIRCUITS WILL BE DESIGNED AND FULLY MONOLITHICS OSCILLATORS FABRICATED AND EVALUATED DURING PHASE II.

* Information listed above is at the time of submission. *

You are here

HIGH EFFICIENCY MONOLITHIC GUNN OSCILLATORS