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High Performance AlGaN HEMT Devices Grown on Lattice Matched Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DASG60-02-P-0180
Agency Tracking Number: 02-0358
Amount: $69,796.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
52B Cummings Park, Suite 314
Woburn, MA 01801
United States
DUNS: 032691763
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Robert Bell
 VP Product Development
 (781) 376-1505
 rabell@magnoliaoptical.com
Business Contact
 Yash Puri
Title: Exec VP
Phone: (781) 376-1505
Email: yrpuri@magnoliaoptical.com
Research Institution
N/A
Abstract

"AlGaN-based heterostructures have demonstrated versatility in optical and electronic applications which is practically unmatched by other material systems. The AlGaN/GaN high electron mobility transistors (HEMTs) constitute a leading candidate forsimultaneously realizing ultra-high frequency low noise amplifiers and power amplifiers. The electron transport properties at the AlGaN/GaN interface along with the high electron saturation velocity and high breakdown fields in GaN are the basis for thesuperior performance of these devices. AlGaN/GaN HEMTs on SiC, 100 - 150 mm-wide with a record power density of 9.8 W/mm at 8 GHz (about ten times GaAs devices) have been demonstrated with gain of 9.6 dB and power added efficiency of 47%. While thesedevices and amplifiers were grown using metal-organic chemical vapor deposition, recently AlGaN/GaN HEMTs grown by molecular beam epitaxy (MBE) have essentially attained parity. We will study the design, development, and fabrication of HEMT devices usingMBE. In the last decade, electronic devices that operate reliably at high temperatures in excess of 300 C and beyond have been under development for a wide variety of new applications.The GaN/AlGaN-based HEMT power transistors have wide commercial markets in radar and range finding, collision avoidance, digital transmission (including HDTV, MMDS and LMDS), satellites, and automobiles and engine sensors. The high temperature and highsingle transist

* Information listed above is at the time of submission. *

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