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High Power Frequency Doubled Laser Diode Devices

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 35855
Amount: $56,815.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
6 Pierson Drive
Hockessin, DE 19707
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dr. N. Melikechi
 (302) 739-3983
Business Contact
Phone: () -
Research Institution
N/A
Abstract

This Small Business Innovation Research Phase I program will determine the practicality of increasing the second harmonic (SH) output of frequency doubling devices by at least 5 times current gutput powers. Altos has demonstrated in preliminary experiments have a 2 times to 3 times increase in SH output by creating thermal gradients across the waveguide structures used to frequency double the laser diodes. These preliminary results have been reproduced at different operating wavelengths and with different quality KTP waveguides. Altos will draw from its existing inventory of KTP waveguides to provide suitable samples for work under this program. Increasing the output power of frequency doubled laser diode devices to more than 10 mW will open up a broad range of applications, such as in data storage, medical diagnostics, and biological/chemical sensing. Although the blue/violet wavelengths of these devices are highly sought, the currently low power ranges limit the application potential.

* Information listed above is at the time of submission. *

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