An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials

Phase I objective is to demonstrate the feasibility of our proposed passivation approach to minimize the dark current noise and improve the quantum efficiency in the GaSb based type II superlattice detectors. Phase I goal is to demonstrate the feasibility of our technology to fabricate photodiodes with cut-off wavelength in excess of 10µm, quantum efficiency exceeding 70% and dark current density less than 50% of that calculated using Rule 07 at long wavelength infrared (LWIR). Phase II effort will focus on the validation of our passivation approach with demonstration of 320x256 and larger format FPAs with much improved performance over the current state of the art.