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Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates
Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-13-C-7191
Agency Tracking Number: B12A-003-0039
Amount:
$99,994.00
Phase:
Phase I
Program:
STTR
Solicitation Topic Code:
MDA12-T003
Solicitation Number:
2012.A
Timeline
Solicitation Year:
2012
Award Year:
2013
Award Start Date (Proposal Award Date):
2012-11-01
Award End Date (Contract End Date):
2013-04-30
Small Business Information
1912 NW 67th Place
Gainesville, FL
-
United States
DUNS:
024935517
HUBZone Owned:
No
Woman Owned:
Yes
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Rajiv Singh
Title: Professor
Phone: (352) 334-7270
Email: rksingh@sinmat.com
Title: Professor
Phone: (352) 334-7270
Email: rksingh@sinmat.com
Business Contact
Name: Deepika Singh
Title: President and CEO
Phone: (352) 334-7237
Email: singh@sinmat.com
Title: President and CEO
Phone: (352) 334-7237
Email: singh@sinmat.com
Research Institution
Name: University of Florida
Contact: Rajiv Singh
Address:
Phone: (352) 392-1032
Type: Nonprofit College or University
Contact: Rajiv Singh
Address:
100 Rhines Hall
Gainesville, FL
32611-6400
United States
Phone: (352) 392-1032
Type: Nonprofit College or University
Abstract
Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32µm) range. The production of epi quality GaSb wafers still remains one of the important problems for rapid commercialization of GaSb devices. Sinmat Inc. proposes a novel chemical mechanical smoothening and passivation process that is expected to lead to ultra-smooth (<2) GaSb epi-ready passivated surface in a reliable consistent manner.
* Information listed above is at the time of submission. *
